Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: The present disclosure relates to a method for removing anions such as nitrate ion, sulfate ion, chloride ion, and phosphate ion existing in underground water, surface water or waste water. The method involves adding alumina cement and a calcium compound to the water containing the anion followed by applying an electric field thereto, thereby forming a chemical precipitate which is an insoluble complex salt. The disclosure also relates to a continuous process for removing the anion by continuously performing the above method for removing anions.

Abstract: A method for removing anions such as nitrate ion, sulfate ion, chloride ion, and phosphate ion existed in underground water, surface water or waste water, comprising adding alumina cement and a calcium compound into the water containing the anion and followed by applying an electric field thereto, thereby to thereby to form a chemical precipitation which is an insoluble complex salt, and a continuous process for removing the anion by continuously performing the above method for removing anions.