Abstract: A fabrication method and structure of array nozzles on thermal inkjet print head is provided. Volcano shape array nozzles and inkjet vaporization chambers with accurate alignment to the individual positions of micro-heating elements on the wafer surface are obtained by using lithography and copper plating methods. The nozzles are made of (photolithographic) polymer materials, such as polyimide, being susceptible to operate in elevated temperature. The size and location of all nozzles can be defined accurately and simultaneously by a masked lithographic process, so that excellent dimension control over all nozzles can be achieved for quality inkjet printing. The extended shape to the outer surface of the nozzle plate can be engraved by another masked process into a tilting angle, in order to meet requirement of fluid dynamic for better ink jetting.

Abstract: The present invention discloses a fabrication method and structure of spiral RF inductor on porous glass substrate. Thick porous silicon layer is natively formed on a silicon wafer by anodic etching the silicon material to a high degree of porosity. The porous silicon is than thermally oxidized at high temperature converting it into porous glass texture. The oxidation rate can be rapid due to open pore character of the etched structure, which allows oxidizing agents to penetrate deeply into the wafer. If the porosity is large enough, the pores will not be sealed by the expansion of oxide during the oxidation, which results a porous structure of glass-and-air mixture of low relative dielectric constant slightly over a value of 2. The final holes appear on the wafer surface can be sealed by CVD coating step, if necessary. This ultra-flat, low-k, silicon-based substrate allows RF spiral inductor to be made on its surface with excellently low loss, or high Q value.

Abstract: The present invention discloses a packaging structure of LED-multiplexer/driver hybridization for LED printer head. In order to connect the LED-multiplexer module to the LED chip without wire bonding, a multiplexer chip, made of silicon material, has multiplexer circuit on one side and a through engraved U-shape trench on the other side, a linear array LED chip, made of non-silicon material, is stack-hybridized into the through engraved U-shape trench, to form a hybridized wafer with all the upper surfaces of LEDs and the multiplexer circuit in the same plane to form a co-planar surface. A plurality of joint-metal, made by photo-lithography and etching, screen printing of any solder paste, ink-jet printing of any appropriate solder paste or by lift-off method, is formed on said co-planar surface of said multiplexer circuit and linear array LED to connect the bonding pad of the multiplexer device and the positive electrode of the LED of each pixel.

Abstract: This invention relates to a novel stack-integration package of a light emitter and a photodetector in a high speed, full duplex optical transceiver for fiber communications. The structure is comprised of a photodetector chip, having an isolated micromachined cavity on the chip surface, and a light emitter chip, stacked on the bottom surface inside that cavity, so that a stack-integrated embodiment of light detector and emitter capable of performing full duplex optical communication is resulted. Said cavity surface in the photodetector is coated with reflective metal to prevent direct optical crosstalk from the emitter to the photodetector. Said light emitter means either LED (light emitting diode) or LD (laser diode). The present invention is further characterized by having a transparent encapsulation over the stack-integrated embodiment with a specific surface contour that minimizes the Fresnel reflection at the encapsulation-air interface and its associated crosstalk aftereffect.