Patents by Inventor Jin-Shing Huang

Jin-Shing Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a capacitor dielectric structure
    Publication number: 20030199135
    Abstract: A method of forming capacitor dielectric structure, comprising steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process to form a nitridation layer on the oxide layer.
    Type: Application
    Filed: May 15, 2003
    Publication date: October 23, 2003
    Applicant: ProMOS Technologies Inc.
    Inventors: Yueh-Chuan Lee, Shih-Lung Chen, Jin-Shing Huang, Wen-Sheng Lee
  • Method of forming a capacitor dielectric structure
    Publication number: 20030119238
    Abstract: A method of forming capacitor dielectric structure, comprising steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process to form a nitridation layer on the oxide layer.
    Type: Application
    Filed: December 26, 2001
    Publication date: June 26, 2003
    Inventors: Yueh-Chuan Lee, Shih-Lung Chen, Jin-Shing Huang, Wen-Sheng Lee