Abstract: A vehicle seat position adjustment device is configured to stably perform a tilting operation of a seat cushion by performing an operation of rotating a first tilting link hinged to a gear box in a standing direction of a first tilting link while the gear box is moved rearwards along a lead screw, an operation of pushing up a second tilting link hinged to the first tilting link while the first tilting link is rotated in a standing direction, and an operation of allowing the second tilting link to push up a front end of a seat cushion frame. The vehicle seat position adjustment device may achieve a relaxation comfort posture by tilting the seat cushion and simultaneously reclining a seatback connected to the seat cushion rearwards.

Abstract: A device for adjusting a position of a vehicle seat has a structure in which two or more adjustment devices, such as lead screws for adjusting tilting, are connected to the opposite side portions of a seat cushion frame to allow the lead screws to rotate by two gearboxes connected to one motor, so that a seat cushion is stably tilted by the two or more lead screws and the opposite side portions of the seat cushion frame is stably supported by the two or more lead screws, in order to prevent shaking, vibration, and torsional deformation caused by a gap generated when tilting the seat cushion frame.

Abstract: A film depositing composition including a Group 4 metal element-containing precursor compound and a method for forming a Group 4 metal element-containing film using same is described. The use of the film depositing composition including a Group 4 metal element-containing precursor compound achieves self-limiting film growth of ALD over a wide temperature range from low to high temperatures, enabling the formation of a Group 4 metal element-containing film for various purposes at various process temperatures. Particularly, according to the method for forming a Group 4 metal element-containing film of this invention, the growth per cycle (GPC) of ALD is consistent over a broad temperature range, thus making it possible to form a Group 4 metal element-containing film of uniform thickness even on surfaces with large aspect ratio trenches. Thus, the method can be advantageously utilized in manufacturing various semiconductor devices, such as DRAM, 3D NAND flash memory, and the like.

Abstract: The present invention relates to a molybdenum precursor compound, a composition for forming a molybdenum-containing film comprising same, a molybdenum-containing film formed by using same, and a method for depositing the molybdenum-containing film. The molybdenum precursor compound has a single structure and high purity, and thus can form a high-quality molybdenum-containing film, and has excellent thermal stability and low specific resistance, and thus may have various applications in the semiconductor field. In particular, since the molybdenum precursor compound can form a film having excellent coating properties and uniformity even on a substrate having patterns (grooves) on the surface, a porous substrate, a plastic substrate, or a substrate having a complex shape, a high-quality molybdenum-containing film can be easily realized.

Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Abstract: A silicon precursor compound, a composition for forming a silicon-containing film, wherein the composition contains the compound; and a method for forming a silicon-containing film by using the composition for forming a silicon-containing film are disclosed. The composition for forming a silicon-containing film includes a silicon precursor compound having a specific structure, thus making it possible to achieve the self-limiting film growth of ALD over a wide temperature range of 150° C. to 850° C., control the thickness of the silicon-containing film to be extremely thin and uniform, and form a film having excellent coverage and uniformity even on a substrate having a complex shape, and furthermore, further improve the characteristics of a semiconductor device.

Abstract: A method for forming a silicon-containing film and a silicon-containing film formed by the method are disclosed. The method for forming a silicon-containing film can use a composition for forming a silicon-containing film including a silicon precursor compound having a specific structure to efficiently form a silicon-containing film including a silicon-containing oxide film or a silicon-containing composite metal oxide film at a high temperature of 600° C. or more, control the silicon-containing film to have a thickness and composition of a desired film, and form a silicon-containing film having excellent coverage and uniformity even on a substrate with a complex shape.

Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: The present disclosure relates to a hafnium precursor compound, a precursor composition for forming hafnium-containing film including the hafnium precursor compound and a method of forming a hafnium-containing film using the precursor composition.

Abstract: The present application relates to: a ruthenium precursor compound for forming a film having high thermal stability; a precursor composition for forming a film, comprising the ruthenium precursor compound; and a method for forming a ruthenium-containing film using the precursor for forming a film.

Abstract: The present invention relates to an interdigitated microelectrode biosensor using the reaction between receptors and target biomaterials, the interdigitated microelectrode biosensor comprising: an insulating layer formed so as to cover all of the sensor formation area of a substrate; a first interdigitated microelectrode formed such that a plurality of first protruding electrodes are arranged in a comb shape on the insulating layer of the substrate; a second interdigitated microelectrode, facing the first interdigitated microelectrode and formed such that a plurality of second protruding electrodes are arranged in a comb shape on the insulating layer of the substrate such that the plurality of second protruding electrodes are arranged to respectively interdigitate with the plurality of first protruding electrodes formed at the first interdigitated microelectrode; and a plurality of receptors arranged in the space between the first and second interdigitated microelectrodes, which are arranged to interdigitate

Abstract: The present disclosure relates to an aluminum compound, an aluminum-containing film-forming precursor composition including the aluminum compound, and a method of preparing an aluminum-containing film using the aluminum-containing film-forming precursor composition.

Abstract: The present disclosure relates to a silicon precursor compound, a method of preparing the silicon precursor compound, a silicon-containing film-forming precursor composition including the silicon precursor compound, and a method of forming a silicon-containing film using the precursor compound.

Abstract: The present disclosure relates to an yttrium/lanthanide metal precursor compound, a precursor composition for depositing an yttrium/lanthanide metal-containing film including the yttrium/lanthanide metal precursor compound, and a method of depositing the yttrium/lanthanide metal-containing film using the precursor composition.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: A seatback frame for vehicles is disclosed. The seatback frame for vehicles has a simple structure without bracket structures used to install a conventional seatback frame and thus achieves cost reduction and weight reduction. In particular, the seatback frame is segmented into several parts having different rigidities so that only a part, on which load is concentrated, is set to have high strength and thus avoids overdesign for excessively high strength of an unnecessary part.

Abstract: A seatback frame for vehicles is disclosed. The seatback frame for vehicles has a simple structure without bracket structures used to install a conventional seatback frame and thus achieves cost reduction and weight reduction. In particular, the seatback frame is segmented into several parts having different rigidities so that only a part, on which load is concentrated, is set to have high strength and thus avoids overdesign for excessively high strength of an unnecessary part.

Abstract: The present invention relates to an interdigitated microelectrode biosensor using the reaction between receptors and target biomaterials, the interdigitated microelectrode biosensor comprising: an insulating layer formed so as to cover all of the sensor formation area of a substrate; a first interdigitated microelectrode formed such that a plurality of first protruding electrodes are arranged in a comb shape on the insulating layer of the substrate; a second interdigitated microelectrode, facing the first interdigitated microelectrode and formed such that a plurality of second protruding electrodes are arranged in a comb shape on the insulating layer of the substrate such that the plurality of second protruding electrodes are arranged to respectively interdigitate with the plurality of first protruding electrodes formed at the first interdigitated microelectrode; and a plurality of receptors arranged in the space between the first and second interdigitated microelectrodes, which are arranged to interdigitate