Abstract: The present invention relates to a composition for the diagnosis of a degenerative brain disease, comprising hpmA, which is a substance derived from Proteus, Shigella, Klebsiella pneumoniae, or Citrobacter, preferably a Proteus mirabilis strain, from a biological sample of a subject. In addition, the present invention relates to a method for providing information for the diagnosis of a degenerative brain disease such as Parkinson's disease, brain neuritis (neuroinflammation), or Alzheimer's disease, by measuring the amount of hpmA.

Abstract: In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

Abstract: In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

Abstract: In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

Abstract: A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.

Abstract: In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

Abstract: A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.

Abstract: Provided are a mask set for in-situ synthesizing probes of a microarray, a method of fabricating the mask set, and a method of fabricating the microarray using the mask set. A mask set for a microarray includes a plurality of masks for in-situ synthesizing probes onto a substrate which includes an array of a plurality of probe cells, wherein each mask includes light-transmitting regions and light-blocking regions, each probe cell corresponds to a light-transmitting region or a light-blocking region, and a pattern of each light-transmitting region is corrected for an optical proximity effect.

Abstract: A method of adjusting pattern density includes determining a reference pattern density, defining dummy generation fields and designed patterns, forming basic dummy patterns on the dummy generation fields, evaluating a total pattern density from a sum of a density of the designed patterns and a density of the basic dummy patterns, adjusting a size of the basic dummy patterns so that the total pattern density reaches the reference pattern density, and combining data of the adjusted dummy patterns with data of the designed patterns.