Patents by Inventor Jin Wan Park
Jin Wan Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230070922Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.Type: ApplicationFiled: November 8, 2022Publication date: March 9, 2023Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Gyu Wan Han, Won Bae Bang, Ju Hyung Lee, Min Hwa Chang, Dong Joo Park, Jin Young Khim, Jae Yun Kim, Se Hwan Hong, Seung Jae Yu, Shaun Bowers, Gi Tae Lim, Byoung Woo Cho, Myung Jea Choi, Seul Bee Lee, Sang Goo Kang, Kyung Rok Park
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Patent number: 11581390Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.Type: GrantFiled: January 7, 2021Date of Patent: February 14, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jin Sung An, Young Woo Park, Se Wan Son, Moo Soon Ko, Jeong-Soo Lee, Ji Seon Lee, Deuk Myung Ji
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Patent number: 11566178Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.Type: GrantFiled: November 10, 2020Date of Patent: January 31, 2023Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
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Patent number: 11552150Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.Type: GrantFiled: December 9, 2020Date of Patent: January 10, 2023Assignee: Samsung Display Co., Ltd.Inventors: Se Wan Son, Moo Soon Ko, Rae Young Gwak, Jin Seock Ma, Min Jeong Park, Ki Bok Yoo, So La Lee, Jin Goo Jung, Jong Won Chae, Ye Ji Han
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Publication number: 20220415769Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.Type: ApplicationFiled: August 29, 2022Publication date: December 29, 2022Inventors: Jae Yun Kim, Gi Tae Lim, Woon Kab Jung, Ju Hoon Yoon, Dong Joo Park, Byong Woo Cho, Gyu Wan Han, Ji Young Chung, Jin Seong Kim, Do Hyun Na
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Patent number: 11530355Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.Type: GrantFiled: November 10, 2020Date of Patent: December 20, 2022Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
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Patent number: 11512226Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.Type: GrantFiled: November 6, 2020Date of Patent: November 29, 2022Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
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Publication number: 20220367888Abstract: An apparatus for controlling driving of a stack cooling pump of a fuel cell system is provided. The apparatus includes a cooling unit having a fuel cell stack installed in a fuel cell vehicle and a cooling pump configured to move a coolant. A reservoir allows the coolant moving toward the cooling pump to be injected thereinto. A controller is configured to sequentially operate the cooling pump in a predetermined pre-run mode and a predetermined air bubble removal mode when the coolant is injected into the reservoir.Type: ApplicationFiled: May 4, 2022Publication date: November 17, 2022Inventors: Chul Wan PARK, Jae Ho Han, Young June Oh, Jin Hun Lee, Chang Hwa Hyun
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Patent number: 11499073Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.Type: GrantFiled: November 6, 2020Date of Patent: November 15, 2022Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
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Patent number: 11495505Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.Type: GrantFiled: September 11, 2020Date of Patent: November 8, 2022Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Gyu Wan Han, Won Bae Bang, Ju Hyung Lee, Min Hwa Chang, Dong Joo Park, Jin Young Khim, Jae Yun Kim, Se Hwan Hong, Seung Jae Yu, Shaun Bowers, Gi Tae Lim, Byoung Woo Cho, Myung Jea Choi, Seul Bee Lee, Sang Goo Kang, Kyung Rok Park
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Patent number: 11479720Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.Type: GrantFiled: November 10, 2020Date of Patent: October 25, 2022Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
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Patent number: 11482496Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.Type: GrantFiled: October 16, 2020Date of Patent: October 25, 2022Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Myung Jea Choi, Gyu Wan Han, Gi Tae Lim, Dong Joo Park, Ji Hun Yi, Jin Young Khim
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Patent number: 11466207Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.Type: GrantFiled: November 3, 2020Date of Patent: October 11, 2022Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
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Patent number: 11466208Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.Type: GrantFiled: November 3, 2020Date of Patent: October 11, 2022Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
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Patent number: 11469426Abstract: A thermal management system for a fuel cell vehicle is provided. The thermal management system includes a fuel cell stack, a heater configured to use power generated by the fuel cell stack, a radiator configured to cool a coolant, a pump configured to circulate the coolant, and a valve configured to control a temperature of the coolant by adjusting a flow rate of the coolant supplied to the pump from at least one of the fuel cell stack, the heater, or the radiator.Type: GrantFiled: May 5, 2020Date of Patent: October 11, 2022Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Jin Hun Lee, Tae Geun Kim, Hyun Ju Ji, Wook Il Jang, Oh Tak Kwon, Hun Woo Park, Chui Wan Park
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Patent number: 11430723Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.Type: GrantFiled: October 1, 2018Date of Patent: August 30, 2022Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Jae Yun Kim, Gi Tae Lim, Woon Kab Jung, Ju Hoon Yoon, Dong Joo Park, Byong Woo Cho, Gyu Wan Han, Ji Young Chung, Jin Seong Kim, Do Hyun Na
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Patent number: 11421156Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.Type: GrantFiled: November 10, 2020Date of Patent: August 23, 2022Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
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Patent number: 11414569Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.Type: GrantFiled: November 6, 2020Date of Patent: August 16, 2022Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
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Patent number: 11411142Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).Type: GrantFiled: September 18, 2020Date of Patent: August 9, 2022Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
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Patent number: 11398455Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The second internal interconnect can be coupled to the second electronic device and the first electronic device. The encapsulant can cover the substrate inner sidewall and the device stack, and can fill the cavity. Other examples and related methods are disclosed herein.Type: GrantFiled: June 3, 2019Date of Patent: July 26, 2022Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Gyu Wan Han, Won Bae Bang, Ju Hyung Lee, Min Hwa Chang, Dong Joo Park, Jin Young Khim, Jae Yun Kim, Se Hwan Hong, Seung Jae Yu, Shaun Bowers, Gi Tae Lim, Byoung Woo Cho, Myung Jea Choi, Seul Bee Lee