Abstract: The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).

Abstract: An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.

Abstract: The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple structure and low cost.

Abstract: The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively.

Abstract: The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).

Abstract: An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.

Abstract: A photonic generator is provided. The photonic generator uses ultra-wide band millimeter wave (MMW) for generating a high-power ultra-broad band white noise. Thus, the present disclosure can be used for failure detection of instantaneous all-band device, noise detection of instantaneous all-band amplifier and mixer, wide-band cipher transmission, pseudo-random bit generation, ADC dithering of analog-digital converter, saturation power test of wide-band optical communicator, system noise detection of MMW receiver, and gain and phase detection of MMW interferometer.

Abstract: The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple structure and low cost.

Abstract: An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.

Abstract: An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.

Abstract: The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is concentrated on a multiplication layer for producing avalanche and a minor part of the electric field is left on the absorption layer for transferring carrier without avalanche. Thus, bandwidth limit from a conflict between RC bandwidth and carrier transferring time is relieved. Meanwhile, active area is enlarged and alignment error is improved without sacrificing component velocity too much.

Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.

Abstract: The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is concentrated on a multiplication layer for producing avalanche and a minor part of the electric field is left on the absorption layer for transferring carrier without avalanche. Thus, bandwidth limit from a conflict between RC bandwidth and carrier transferring time is relieved. Meanwhile, active area is enlarged and alignment error is improved without sacrificing component velocity too much.

Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.

Abstract: The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.

Abstract: A waveguide structure is formed in the present invention. With the structure, a yield of a cleaving process is improved. A high responsivity and a low sensitivity can be achieved. And an error tolerance for a production is also increased. The present invention can be applied to optoelectronic elements, such as an optical diode and a light modulator.

Abstract: The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.

Abstract: The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.

Abstract: The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.

Abstract: The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing very high sensitivity; and is integrated into an IC, or into a micro electro-mechanical system of Si semiconductor.