Abstract: A manufacturing method of an input circuit of a flip-flop including: depositing a first gate strip, a second gate strip, a third gate strip, and a fourth gate strip, wherein a distance between the first and second gate strips, a distance between the second and third gate strips, and a distance between the third and fourth gate strips equal; executing a cut-off operation upon the first gate strip to generate a first first gate strip and a second first gate strip; executing a cut-off operation upon the third gate strip to generate a first third gate strip and a second third gate strip; and directing a first signal to the first first gate strip and the second third gate strip, and a second signal to the second first gate strip and the first third gate strip.

Abstract: A manufacturing method of an input circuit of a flip-flop including: depositing a first gate strip, a second gate strip, a third gate strip, and a fourth gate strip, wherein a distance between the first and second gate strips, a distance between the second and third gate strips, and a distance between the third and fourth gate strips equal; executing a cut-off operation upon the first gate strip to generate a first first gate strip and a second first gate strip; executing a cut-off operation upon the third gate strip to generate a first third gate strip and a second third gate strip; and directing a first signal to the first first gate strip and the second third gate strip, and a second signal to the second first gate strip and the first third gate strip.

Abstract: A layout method of a semiconductor device is disposed. The layout method includes: disposing a first metal strip directed to a first clock signal and disposing a first block strip parallel with the first metal strip, wherein the first block strip is indicative of a first blockage which prevents a routing tool from placing another metal strip on the location of the first block strip.

Abstract: A manufacturing method of an input circuit of a flip-flop including: depositing a first gate strip, a second gate strip, a third gate strip, and a fourth gate strip, wherein a distance between the first and second gate strips, a distance between the second and third gate strips, and a distance between the third and fourth gate strips equal; executing a cut-off operation upon the first gate strip to generate a first first gate strip and a second first gate strip; executing a cut-off operation upon the third gate strip to generate a first third gate strip and a second third gate strip; and directing a first signal to the first first gate strip and the second third gate strip, and a second signal to the second first gate strip and the first third gate strip.

Abstract: An input circuit of a flip-flop includes: a first gate strip, a second gate strip and a third gate strip. The first gate strip is a co-gate terminal of a first PMOS and a first NMOS; the second gate strip is disposed immediately adjacent to the first gate strip, and a co-gate terminal of a second PMOS and a second NMOS. The first PMOS and the second PMOS share a doping region as a co-source terminal. The first NMOS and the second NMOS share a doping region as a co-source terminal. The third gate strip is disposed immediately adjacent to the second gate strip. The third gate strip is a co-gate terminal of a third PMOS and a third NMOS. The second PMOS and the third PMOS share a doping region as a co-drain terminal. The second NMOS and the third NMOS share a doping region as a co-drain terminal.

Abstract: An input circuit of a flip-flop includes: a first gate strip, a second gate strip and a third gate strip. The first gate strip is a co-gate terminal of a first PMOS and a first NMOS; the second gate strip is disposed immediately adjacent to the first gate strip, and a co-gate terminal of a second PMOS and a second NMOS. The first PMOS and the second PMOS share a doping region as a co-source terminal. The first NMOS and the second NMOS share a doping region as a co-source terminal. The third gate strip is disposed immediately adjacent to the second gate strip. The third gate strip is a co-gate terminal of a third PMOS and a third NMOS. The second PMOS and the third PMOS share a doping region as a co-drain terminal. The second NMOS and the third NMOS share a doping region as a co-drain terminal.

Abstract: A layout method of a semiconductor device is disposed. The layout method includes: disposing a first metal strip directed to a first clock signal and disposing a first block strip parallel with the first metal strip, wherein the first block strip is indicative of a first blockage which prevents a routing tool from placing another metal strip on the location of the first block strip.

Abstract: An example circuit includes: one or more power rails and a tap cell structure. The tap cell structure includes one or more decoupling capacitor cells and one or more tap cells. The one or more tap cells are electrically coupled to the one or more power rails. The one or more decoupling capacitor cells are disposed adjacent to the tap cells and electrically coupled to the one or more power rails.

Abstract: An example circuit includes: one or more power rails and a tap cell structure. The tap cell structure includes one or more decoupling capacitor cells and one or more tap cells. The one or more tap cells are electrically coupled to the one or more power rails. The one or more decoupling capacitor cells are disposed adjacent to the tap cells and electrically coupled to the one or more power rails.