Patents by Inventor Jinwhan Lee

Jinwhan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6847092
    Abstract: A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: January 25, 2005
    Assignee: Infineon Technologies AG
    Inventors: Michael Maldei, Malati Hegde, Guenter Gerstmeier, Jinwhan Lee, Steven M. Baker, Jon S. Berry, II, Brian Cousineau, Wenchao Zheng
  • Publication number: 20040173868
    Abstract: A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.
    Type: Application
    Filed: March 6, 2003
    Publication date: September 9, 2004
    Inventors: Michael Maldei, Malati Hegde, Guenter Gerstmeier, Jinwhan Lee, Steven M. Baker, Jon S. Berry, Brian Cousineau, Wenchao Zheng