Patents by Inventor Jin-Won Jung

Jin-Won Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12356866
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: July 8, 2025
    Assignees: Kioxia Corporation, SK hynix Inc.
    Inventors: Tadaaki Oikawa, Youngmin Eeh, Eiji Kitagawa, Kazuya Sawada, Taiga Isoda, Ku Youl Jung, Jin Won Jung
  • Patent number: 12284811
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: April 22, 2025
    Assignees: Kioxia Corporation, SK HYNIX INC.
    Inventors: Tadaaki Oikawa, Youngmin Eeh, Eiji Kitagawa, Taiga Isoda, Ku Youl Jung, Jin Won Jung
  • Patent number: 12125510
    Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: October 22, 2024
    Assignees: Kioxia Corporation, SK HYNIX INC.
    Inventors: Taiga Isoda, Young Min Eeh, Tadaaki Oikawa, Eiji Kitagawa, Kazuya Sawada, Jin Won Jung, Jung Hyeok Kwak
  • Patent number: 12120896
    Abstract: Described herein is a transparent conductive film including (a) a first laminate including at least two layers containing TiO2, ZrO2 or HfO2, and a layer containing an organic compound in between the two layers containing TiO2, ZrO2 or HfO2, (b) a metal layer, and (c) a second laminate including at least two layers containing ZnO, a layer containing an organic compound between the two layers containing ZnO, and a metallic dopant other than zinc.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: October 15, 2024
    Assignee: BASF COATINGS GMBH
    Inventors: Boram Cho, Jean-Charles Flores, Michael Reinke, Myung Mo Sung, Jin Won Jung
  • Patent number: 11948795
    Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: April 2, 2024
    Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Myung Mo Sung, Lynn Lee, Jin Won Jung, Jong Chan Kim
  • Publication number: 20240099157
    Abstract: Variable resistance elements and semiconductor devices including the variable resistance elements are disclosed. In some implementations, a variable resistance element may include a variable resistance element may include a free layer having a variable magnetization direction that switches between different magnetization directions upon application of a magnetic field, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer and including a metal chalcogenide having a cubic crystal structure.
    Type: Application
    Filed: April 19, 2023
    Publication date: March 21, 2024
    Inventors: Jung Hyeok KWAK, Tae Yup KIM, Ku Youl JUNG, Jin Won JUNG
  • Publication number: 20240090278
    Abstract: The disclosure relates to a display device including an oxide semiconductor pattern. The disclosure provides a driving thin film transistor and a switching thin film transistor using an oxide semiconductor pattern as an active layer. Each of the driving thin film transistor and the switching thin film transistor includes a light shielding pattern. The light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding pattern including the semiconductor material layer, each of the driving thin film transistor and the switching thin film transistor exhibits an increase in threshold voltage and, as such, freedom of circuit design is secured.
    Type: Application
    Filed: August 28, 2023
    Publication date: March 14, 2024
    Inventors: Sung Ju Choi, Jae Yoon Park, Jung Seok Seo, Seo Yeon Im, Jin Won Jung
  • Publication number: 20240074235
    Abstract: A display apparatus is provided. The display apparatus may include a light-emitting device and a pixel driving circuit electrically connected to the light-emitting device. The pixel driving circuit may supply a driving current corresponding to a data signal to the light-emitting device according to a gate signal. For example, the pixel driving circuit may include at least one thin film transistor. The thin film transistor may include an active pattern comprising an oxide semiconductor. A source region of the active pattern overlaps a source semiconductor pattern, and a drain region of the active pattern overlaps a drain semiconductor pattern. The source semiconductor pattern and the drain semiconductor pattern may include n-type impurities. A channel region of the active pattern may be outside the source semiconductor pattern and the drain semiconductor pattern. Thus, in the display apparatus, reliability of the pixel driving circuit may be improved.
    Type: Application
    Filed: June 30, 2023
    Publication date: February 29, 2024
    Inventors: Sung Ju Choi, Jae Yoon Park, Jung Seok Seo, Seo Yeon Im, Jin Won Jung
  • Publication number: 20240072064
    Abstract: The disclosure provides an array substrate of a thin film transistor including an oxide semiconductor pattern, and a display device using the same. The thin film transistor array substrate includes a substrate including an active area and a non-active area disposed around the active area, and a first thin film transistor disposed on the substrate. The first thin film transistor includes a first oxide semiconductor pattern disposed on the substrate, a first gate electrode disposed under the first oxide semiconductor pattern while overlapping with the first oxide semiconductor pattern, a first source electrode and a first drain electrode disposed on the first oxide semiconductor pattern and connected to the first oxide semiconductor pattern, and a first light shielding pattern disposed over the first oxide semiconductor pattern and electrically connected to one of the first source electrode and the first drain electrode while overlapping with the first oxide semiconductor pattern.
    Type: Application
    Filed: August 4, 2023
    Publication date: February 29, 2024
    Applicant: LG Display Co., Ltd.
    Inventors: Sung Ju CHOI, Jung Seok SEO, Jae Yoon PARK, Seo Yeon IM, Jin Won JUNG
  • Publication number: 20240038902
    Abstract: The disclosure provides a driving thin film transistor and a switching thin film transistor each using an oxide semiconductor pattern as an active layer thereof. The driving thin film transistor and the switching thin film transistor include light shielding patterns, respectively. Each light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding patterns including the semiconductor material layer, the driving thin film transistor and the switching thin film transistor achieve an increase in threshold voltage, thereby securing freedom of design.
    Type: Application
    Filed: July 31, 2023
    Publication date: February 1, 2024
    Inventors: Sung Ju CHOI, Young Hyun KO, Chan Yong JEONG, Jung Seok SEO, Jae Yoon PARK, Seo Yeon IM, Jin Won JUNG
  • Publication number: 20240008308
    Abstract: An organic light emitting display device including a substrate, a light emitting element on the substrate, and a driving thin film transistor supplying drive current to the light emitting element is disclosed. The driving thin film transistor includes a buffer layer on the substrate, a first polycrystalline silicon semiconductor layer on the buffer layer, a first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer while being disposed thereon and including a first channel region, a first source region, and a first drain region, a gate insulating layer covering the first oxide semiconductor layer and the first polycrystalline silicon semiconductor layer, a first gate electrode disposed on the gate insulating layer, a first source electrode connected to the first source region, a first drain electrode connected to the first drain region, and a first light shielding layer disposed under the first oxide semiconductor layer while overlapping therewith.
    Type: Application
    Filed: May 11, 2023
    Publication date: January 4, 2024
    Inventors: Sung Ju Choi, Jung Seok Seo, Jae Yoon Park, Seo Yeon Im, Jin Won Jung
  • Patent number: 11814723
    Abstract: A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: November 14, 2023
    Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Myung Mo Sung, Hong Bum Kim, Jin Won Jung, Kyu Seok Han
  • Publication number: 20230180620
    Abstract: A method for fabricating a semiconductor device may include: forming a first magnetic layer over a substrate; forming a tunnel barrier layer over the first magnetic layer by repeatedly performing a unit process of forming a material layer and performing a rapid thermal annealing (RTA) process on the material layer; and forming a second magnetic layer over the tunnel barrier layer.
    Type: Application
    Filed: October 19, 2022
    Publication date: June 8, 2023
    Inventors: Ku Youl JUNG, Jung Hyeok KWAK, Jin Won JUNG, Young Min EEH
  • Patent number: 11486546
    Abstract: A liquefied natural gas (LNG) bunkering equipment test and evaluation system is provided. The system includes a storage tank module configured to store a liquefied natural gas, a supply module for connecting the storage tank module and the bunkering module, a bunkering module configured to perform bunkering by being supplied with the liquefied natural gas, a simulation module provided at a part under the bunkering module and the supply module and the simulation module is configured to simulate a maritime situation by giving a fluidity to the bunkering module and the supply module, and a controller configured to control a driving of the simulation module, thereby simulating various situations of sea areas by giving fluidity to the storage tank module and the bunkering module.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: November 1, 2022
    Assignee: KOREA MARINE EQUIPMENT RESEARCH INSTITUTE
    Inventors: Jae Hyoun Park, Jae Hwan Bae, Jin Won Jung, Soo Sung Jeon, Bong Jae Shin, Young Hun Jeon, Ji Hyun Jung, Dae Hwan Kim, Soon Hyeong Kwon, Kyu Eun Shim, Jeong Hwan Kim
  • Publication number: 20220302205
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).
    Type: Application
    Filed: September 10, 2021
    Publication date: September 22, 2022
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Tadaaki OIKAWA, Youngmin EEH, Eiji KITAGAWA, Taiga ISODA, Ku Youl JUNG, Jin Won JUNG
  • Publication number: 20220302372
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).
    Type: Application
    Filed: September 10, 2021
    Publication date: September 22, 2022
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Tadaaki OIKAWA, Youngmin EEH, Eiji KITAGAWA, Kazuya SAWADA, Taiga ISODA, Ku Youl JUNG, Jin Won JUNG
  • Patent number: 11404098
    Abstract: A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode includes one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: August 2, 2022
    Assignees: KIOXIA CORPORATION, SK HYNIX INC.
    Inventors: Taiga Isoda, Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kazuya Sawada, Jin Won Jung
  • Publication number: 20220199136
    Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.
    Type: Application
    Filed: July 30, 2021
    Publication date: June 23, 2022
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Taiga ISODA, Young Min EEH, Tadaaki OIKAWA, Eiji KITAGAWA, Kazuya SAWADA, Jin Won JUNG, Jung Hyeok KWAK
  • Publication number: 20210372571
    Abstract: A liquefied natural gas (LNG) bunkering equipment test and evaluation system is provided. The system includes a storage tank module configured to store a liquefied natural gas, a supply module for connecting the storage tank module and the bunkering module, a bunkering module configured to perform bunkering by being supplied with the liquefied natural gas, a simulation module provided at a part under the bunkering module and the supply module and the simulation module is configured to simulate a maritime situation by giving a fluidity to the bunkering module and the supply module, and a controller configured to control a driving of the simulation module, thereby simulating various situations of sea areas by giving fluidity to the storage tank module and the bunkering module.
    Type: Application
    Filed: July 15, 2019
    Publication date: December 2, 2021
    Applicant: Korea Marine Equipment Research Institute
    Inventors: Jae Hyoun PARK, Jae Hwan BAE, Jin Won JUNG, Soo Sung JEON, Bong Jae SHIN, Young Hun JEON, Ji Hyun JUNG, Dae Hwan KIM, Soon Hyeong KWON, Kyu Eun SHIM, Jeong Hwan KIM
  • Publication number: 20210287728
    Abstract: According to one embodiment, a memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a capping layer on an upper surface of the second ferromagnetic layer; and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode including one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.
    Type: Application
    Filed: September 9, 2020
    Publication date: September 16, 2021
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Jin Won JUNG