Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.

Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Abstract: A semiconductor package includes a redistribution substrate having a first side and an opposite second side. A plurality of redistribution patterns are in the redistribution substrate, and a semiconductor chip is on the first side of the redistribution substrate. A plurality of metal pillars are positioned around and spaced apart from a periphery of the semiconductor chip and are connected to the redistribution patterns. A plurality of solder balls are on the second side of the redistribution substrate. Each of the metal pillars includes a third side facing the first side of the redistribution substrate, and an opposite fourth side. The fourth side has a square or octagonal shape in plan view.

Abstract: The disclosure provides a driving thin film transistor and a switching thin film transistor each using an oxide semiconductor pattern as an active layer thereof. The driving thin film transistor and the switching thin film transistor include light shielding patterns, respectively. Each light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding patterns including the semiconductor material layer, the driving thin film transistor and the switching thin film transistor achieve an increase in threshold voltage, thereby securing freedom of design.

Abstract: An organic light emitting display device including a substrate, a light emitting element on the substrate, and a driving thin film transistor supplying drive current to the light emitting element is disclosed. The driving thin film transistor includes a buffer layer on the substrate, a first polycrystalline silicon semiconductor layer on the buffer layer, a first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer while being disposed thereon and including a first channel region, a first source region, and a first drain region, a gate insulating layer covering the first oxide semiconductor layer and the first polycrystalline silicon semiconductor layer, a first gate electrode disposed on the gate insulating layer, a first source electrode connected to the first source region, a first drain electrode connected to the first drain region, and a first light shielding layer disposed under the first oxide semiconductor layer while overlapping therewith.

Abstract: A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Abstract: A method for fabricating a semiconductor device may include: forming a first magnetic layer over a substrate; forming a tunnel barrier layer over the first magnetic layer by repeatedly performing a unit process of forming a material layer and performing a rapid thermal annealing (RTA) process on the material layer; and forming a second magnetic layer over the tunnel barrier layer.

Abstract: A liquefied natural gas (LNG) bunkering equipment test and evaluation system is provided. The system includes a storage tank module configured to store a liquefied natural gas, a supply module for connecting the storage tank module and the bunkering module, a bunkering module configured to perform bunkering by being supplied with the liquefied natural gas, a simulation module provided at a part under the bunkering module and the supply module and the simulation module is configured to simulate a maritime situation by giving a fluidity to the bunkering module and the supply module, and a controller configured to control a driving of the simulation module, thereby simulating various situations of sea areas by giving fluidity to the storage tank module and the bunkering module.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).

Abstract: A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode includes one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.

Abstract: A liquefied natural gas (LNG) bunkering equipment test and evaluation system is provided. The system includes a storage tank module configured to store a liquefied natural gas, a supply module for connecting the storage tank module and the bunkering module, a bunkering module configured to perform bunkering by being supplied with the liquefied natural gas, a simulation module provided at a part under the bunkering module and the supply module and the simulation module is configured to simulate a maritime situation by giving a fluidity to the bunkering module and the supply module, and a controller configured to control a driving of the simulation module, thereby simulating various situations of sea areas by giving fluidity to the storage tank module and the bunkering module.

Abstract: According to one embodiment, a memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a capping layer on an upper surface of the second ferromagnetic layer; and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode including one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

Abstract: Described herein is a transparent conductive film including (a) a first laminate including at least two layers containing TiO2, ZrO2 or HfO2, and a layer containing an organic compound in between the two layers containing TiO2, ZrO2 or HfO2, (b) a metal layer, and (c) a second laminate including at least two layers containing ZnO, a layer containing an organic compound between the two layers containing ZnO, and a metallic dopant other than zinc.

Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Abstract: A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Abstract: The present invention relates to an antibody-drug conjugate comprising a drug conjugated to an antibody, a preparation method thereof and the use thereof.

Abstract: The present invention relates to an antibody-drug conjugate comprising a drug conjugated to an antibody, a preparation method thereof and the use thereof.

Abstract: The present invention relates to an antibody-drug conjugate comprising a drug conjugated to an antibody, a preparation method thereof and the use thereof.