Abstract: A packing box according to an embodiment includes a lower body including a bottom portion and a lower wall portion extending upward from the bottom portion; and an upper body including a cover portion and an upper wall portion extending downward from the cover portion defining an inner space with the lower body in case that combined with the lower body. The upper wall portion includes at least one groove in which an edge portion of a display device is inserted, and the cover portion includes at least one opening abutting with the at least one groove.

Abstract: A tray includes a bottom portion including a plurality of protrusion patterns and a sidewall portion protruded from the bottom portion. The sidewall portion includes a first side portion provided with a groove defined therein and extending from the bottom portion, an upper surface extending from the first side portion to a direction away from the bottom portion in a plan view, and a second side portion extending from the upper surface and facing the first side portion.

Abstract: A packing box according to an embodiment includes a lower body including a bottom portion and a lower wall portion extending upward from the bottom portion; and an upper body including a cover portion and an upper wall portion extending downward from the cover portion defining an inner space with the lower body in case that combined with the lower body. The upper wall portion includes at least one groove in which an edge portion of a display device is inserted, and the cover portion includes at least one opening abutting with the at least one groove.

Abstract: A tray includes a bottom portion including a plurality of protrusion patterns and a sidewall portion protruded from the bottom portion. The sidewall portion includes a first side portion provided with a groove defined therein and extending from the bottom portion, an upper surface extending from the first side portion to a direction away from the bottom portion in a plan view, and a second side portion extending from the upper surface and facing the first side portion.

Abstract: A tray module includes a tray in which a plurality of display device components are alternately stackable with a plurality of protective sheets. Each of a protective sheet among the plurality of protective sheets includes: a first polymer layer including a first polymer resin which is foamed, and top and bottom surfaces opposite to each other; a second polymer layer on each of the top and bottom surfaces of the first polymer layer, the second polymer layer including a second polymer resin; and a paper layer defining an outer surface of the protective sheet.

Abstract: A tray module includes a tray in which a plurality of display device components are alternately stackable with a plurality of protective sheets. Each of a protective sheet among the plurality of protective sheets includes: a first polymer layer including a first polymer resin which is foamed, and top and bottom surfaces opposite to each other; a second polymer layer on each of the top and bottom surfaces of the first polymer layer, the second polymer layer including a second polymer resin; and a paper layer defining an outer surface of the protective sheet.

Abstract: A tray for transferring a panel is disclosed. The tray includes a tray mold frame including acrylonitrile-butadiene-styrene (“ABS”) resin, a receiving member, a supporting member and a slot member. The tray mold frame includes four extrusion bars and four molding members. The molding members combine with the extrusion bars. Each of the molding members include a first protruding part on a side surface. The receiving member is disposed inside of the tray mold frame. The supporting member is disposed on a lower surface of the receiving member. The supporting member combines with the extrusion bars configured to support the receiving member. The slot member includes a first groove combining with the first protruding part. The slot member is disposed on the receiving member. Thus, when the panel is transferred by the tray, a fault of the panel during transferring may decrease.

Abstract: A tray for transferring a panel is disclosed. The tray includes a tray mold frame including acrylonitrile-butadiene-styrene (“ABS”) resin, a receiving member, a supporting member and a slot member. The tray mold frame includes four extrusion bars and four molding members. The molding members combine with the extrusion bars. Each of the molding members include a first protruding part on a side surface. The receiving member is disposed inside of the tray mold frame. The supporting member is disposed on a lower surface of the receiving member. The supporting member combines with the extrusion bars configured to support the receiving member. The slot member includes a first groove combining with the first protruding part. The slot member is disposed on the receiving member. Thus, when the panel is transferred by the tray, a fault of the panel during transferring may decrease.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier integrated circuit includes a plurality ofheterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistors and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.