Abstract: A method may include training a machine learning model to determine a first pharmacokinetic parameter and a second pharmacokinetic parameter for a molecule. The machine learning model may be trained by at least determining, based at least on an input including one or more pharmacokinetic models associated with the molecule, a first value of the first pharmacokinetic parameter, determining, based at least on the input, a second value of the first pharmacokinetic parameter, and determining, based at least on the first value and the second value of the first pharmacokinetic parameter, a third value of the second pharmacokinetic parameter. The method may also include applying the trained machine learning model to determine, based at least on a sparsely sampled pharmacokinetic model associated with the molecule, the first pharmacokinetic parameter and/or the second pharmacokinetic parameter. Related methods and articles of manufacture are also disclosed.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate is provided, and a gate oxide layer, a gate structure, and a spacer structure are formed on the semiconductor substrate. The gate oxide layer is located between the gate structure and the semiconductor substrate in a vertical direction, and the spacer structure is located on a sidewall of the gate structure. A SiCoNi process is performed, and a ratio of nitrogen trifluoride (NF3) to ammonia (NH3) used in the SiCoNi process is greater than or equal to 0.35 and less than or equal to 0.4. A nickel silicide layer is formed in the semiconductor substrate after the SiCoNi process, and a part of the nickel silicide layer is located under the spacer structure in the vertical direction.

Abstract: A sensor network comprises at least one lateral optical fiber and at least one longitudinal optical fiber. The lateral fiber comprises optical sensors coupled to a pavement in a transverse orientation relative to a direction of vehicle travel along the pavement. The longitudinal fiber comprises optical sensors coupled to the pavement in a longitudinal orientation relative to the direction of vehicle travel. The optical sensors are configured to produce wavelength shift signals comprising one or more lateral strain signals associated with the lateral fiber and one or more tangential strain signals associated with the longitudinal fiber. A processor is operatively coupled to the sensor network and configured to determine a weight of vehicles moving along the pavement based on the lateral and tangential strain signals. A transmitter is operatively coupled to the processor and configured to transmit the weight of vehicles to a predetermined location.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a titanium nitride (TiN) layer on the p-type semiconductor layer as a nitrogen to titanium (N/Ti) ratio of the TiN layer is greater than 1, forming a passivation layer on the TiN layer and the barrier layer, removing the passivation layer to form an opening, forming a gate electrode in the opening, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer.

Abstract: A refrigerant compressor includes an impeller rotatable about an axis and a volute. A diffuser is axially between a first wall and a second wall, and radially between an outlet of the impeller and the volute. A diffuser plate provides the second wall, which includes a plurality of quarter wave tubes, each of the plurality of quarter wave tubes including a cylindrical blind hole extending radially from the second wall.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

Abstract: In some aspects, the techniques described herein relate to a refrigerant compressor, including: a shrouded impeller including a passageway permitting refrigerant to flow from a location radially outside a shroud of the shrouded impeller to a location radially inside the shroud.

Abstract: Embodiments of this application relate to control parameter optimization technologies. Various embodiments include methods and apparatus for optimizing control parameters. At least one group of initial control parameters within a preset range is randomly generated, to obtain a group of current control parameters; it is determined whether a number of updates has exceeded a preset threshold, referring to a total number of times that the current control parameters have been changed; the group of current control parameters is changed when the number of updates does not reach the preset threshold; and air conditioning control parameters are optimized according to control parameters corresponding to a comprehensive score of a combination when the number of updates reaches the preset threshold.

Abstract: An organic light-emitting diode display device includes a first light-emitting layer, a first anode, a first reflective pattern, and a dielectric material. The first light-emitting layer, the first anode, and the first reflective pattern are located in a first sub-pixel region. The first anode is disposed under the first light-emitting layer in a vertical direction, and the first reflective pattern is disposed under the first anode in the vertical direction. The dielectric material is partly disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected with the first anode.

Abstract: An apparatus for estimating a condition of a battery includes a mode identifying unit configured to identify a usage mode of the battery during a period of time and its corresponding attenuation curve, according to recorded data on battery usage, stored usage modes of the battery and attenuation curves corresponding to the various usage modes, the attenuation curve representing a change of a fully charged capacity of the battery with battery usage; and a condition estimating unit configured to calculate battery degradation according to the recorded data, the identified usage mode and its corresponding attenuation curve, the degradation representing a quantity of the fully charged capacity of the battery that is reduced over the battery usage. The condition of the battery is estimated so as to rationally judge the residual value of the battery in operation.

Abstract: A buck converter with an adaptive turn-on frequency of a pull-up transistor is shown. The buck converter uses a pulse-width modulation (PWM) control signal generator to generate a PWM control signal that drives a power transistor driver to generate PWM signals driving the pull-up transistor and pull-down transistor of the buck converter. Especially, the PWM control signal generator generates the PWM control signal based on feedback of an output voltage of the buck converter as well as feedback of a sensed current about a power transformation component of the buck converter, to modify a turn-on frequency of the pull-up transistor in response to a change in the sensed current.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

Abstract: A lumen stent including a main body stent and a branch stent; the main body stent includes a tubular attachment segment, the attachment segment including a first region and a second region connected to the first region in a circumferential direction; the branch stent is provided in a lumen of the attachment segment and connected to the first region; an axial shortening rate of the first region is smaller than an axial shortening rate of the second region. The lumen stent can reduce the extent to which the branch stent drives the main body stent to shorten.

Abstract: A transient boost controller for controlling a transient boost circuit of a voltage regulator includes a feedback circuit and a processing circuit. The feedback circuit obtains a first feedback signal and a second feedback signal sensed from an output capacitor of the voltage regulator, wherein the first feedback signal is derived from a voltage signal at a first plate of the output capacitor, and the second feedback signal is derived from a voltage signal at a second plate of the output capacitor. The processing circuit generates a detection result according to the first feedback signal and the second feedback signal, and outputs the detection result for controlling the transient boost circuit of the voltage regulator.

Abstract: Query processing using online transactional processing (OLTP) and/or online analytical processing (OLAP) use a distributed graph. Optimizations are described including compute pushdown OLTP mode, single thread OLTP mode, and automatic transition between OLTP mode and OLAP mode. A query processing engine comprises an OLTP processing engine, an OLAP processing engine, and a storage (e.g., a computer memory or storage). The OLTP processing engine is configured to process OLTP queries, and the OLAP processing engine is configured to process OLAP queries. The query processing engine may comprise a transition determination engine configured to determine when to transition query processing between OLTP query processing mode and OLAP query processing mode.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

Abstract: In some aspects, the techniques described herein relate to a refrigerant compressor, including: a shrouded impeller including a passageway permitting refrigerant to flow from a location radially outside a shroud of the shrouded impeller to a location radially inside the shroud.

Abstract: An apparatus can include a body having a plurality of walls dividing the body into a plurality of sections along a height of the body. A first wall and an opposing second wall can define a section of the plurality of sections. A middle portion of the first wall can be disposed closer to the second wall in a first direction than an end portion of the first wall. The first wall and the second wall can move towards each other in the first direction in response to a force applied on the body in a second direction.

Abstract: A reference voltage generation circuit includes a voltage conversion circuit, a voltage divider, a reference voltage generator, an error amplifier, and a control circuit. The voltage conversion circuit is configured to convert an input voltage to an output voltage according to a first control signal. The voltage divider performs a voltage division operation on the output voltage to generate first and second feedback voltages. The reference voltage generator is configured to generate a reference voltage according to a second control signal. The error amplifier is configured to generate the first control signal according to a difference between the reference voltage and the first feedback voltage. The control circuit is configured to generate the second control signal according to the second feedback voltage and the reference voltage. In response to the second feedback voltage being decreasing gradually, the reference voltage is adjusted to trace the second feedback voltage.

Abstract: A buck converter includes a first transistor, a second transistor, an inductor and a capacitor. The first transistor, the second transistor and the inductor are coupled to a switching node. A method includes charging the switching node for a predetermined duration using a first charging current, detecting a voltage at the switching node to obtain a first detection voltage, and determining the connection status of the inductor according to at least the first detection voltage.