Abstract: In some aspects, the techniques described herein relate to a refrigerant compressor, including: a shrouded impeller including a passageway permitting refrigerant to flow from a location radially outside a shroud of the shrouded impeller to a location radially inside the shroud.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

Abstract: An organic light-emitting diode display device includes a first light-emitting layer, a first anode, a first reflective pattern, and a dielectric material. The first light-emitting layer, the first anode, and the first reflective pattern are located in a first sub-pixel region. The first anode is disposed under the first light-emitting layer in a vertical direction, and the first reflective pattern is disposed under the first anode in the vertical direction. The dielectric material is partly disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected with the first anode.

Abstract: Embodiments of this application relate to control parameter optimization technologies. Various embodiments include methods and apparatus for optimizing control parameters. At least one group of initial control parameters within a preset range is randomly generated, to obtain a group of current control parameters; it is determined whether a number of updates has exceeded a preset threshold, referring to a total number of times that the current control parameters have been changed; the group of current control parameters is changed when the number of updates does not reach the preset threshold; and air conditioning control parameters are optimized according to control parameters corresponding to a comprehensive score of a combination when the number of updates reaches the preset threshold.

Abstract: An apparatus for estimating a condition of a battery includes a mode identifying unit configured to identify a usage mode of the battery during a period of time and its corresponding attenuation curve, according to recorded data on battery usage, stored usage modes of the battery and attenuation curves corresponding to the various usage modes, the attenuation curve representing a change of a fully charged capacity of the battery with battery usage; and a condition estimating unit configured to calculate battery degradation according to the recorded data, the identified usage mode and its corresponding attenuation curve, the degradation representing a quantity of the fully charged capacity of the battery that is reduced over the battery usage. The condition of the battery is estimated so as to rationally judge the residual value of the battery in operation.

Abstract: A buck converter with an adaptive turn-on frequency of a pull-up transistor is shown. The buck converter uses a pulse-width modulation (PWM) control signal generator to generate a PWM control signal that drives a power transistor driver to generate PWM signals driving the pull-up transistor and pull-down transistor of the buck converter. Especially, the PWM control signal generator generates the PWM control signal based on feedback of an output voltage of the buck converter as well as feedback of a sensed current about a power transformation component of the buck converter, to modify a turn-on frequency of the pull-up transistor in response to a change in the sensed current.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

Abstract: A lumen stent including a main body stent and a branch stent; the main body stent includes a tubular attachment segment, the attachment segment including a first region and a second region connected to the first region in a circumferential direction; the branch stent is provided in a lumen of the attachment segment and connected to the first region; an axial shortening rate of the first region is smaller than an axial shortening rate of the second region. The lumen stent can reduce the extent to which the branch stent drives the main body stent to shorten.

Abstract: A transient boost controller for controlling a transient boost circuit of a voltage regulator includes a feedback circuit and a processing circuit. The feedback circuit obtains a first feedback signal and a second feedback signal sensed from an output capacitor of the voltage regulator, wherein the first feedback signal is derived from a voltage signal at a first plate of the output capacitor, and the second feedback signal is derived from a voltage signal at a second plate of the output capacitor. The processing circuit generates a detection result according to the first feedback signal and the second feedback signal, and outputs the detection result for controlling the transient boost circuit of the voltage regulator.

Abstract: Query processing using online transactional processing (OLTP) and/or online analytical processing (OLAP) use a distributed graph. Optimizations are described including compute pushdown OLTP mode, single thread OLTP mode, and automatic transition between OLTP mode and OLAP mode. A query processing engine comprises an OLTP processing engine, an OLAP processing engine, and a storage (e.g., a computer memory or storage). The OLTP processing engine is configured to process OLTP queries, and the OLAP processing engine is configured to process OLAP queries. The query processing engine may comprise a transition determination engine configured to determine when to transition query processing between OLTP query processing mode and OLAP query processing mode.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

Abstract: An apparatus can include a body having a plurality of walls dividing the body into a plurality of sections along a height of the body. A first wall and an opposing second wall can define a section of the plurality of sections. A middle portion of the first wall can be disposed closer to the second wall in a first direction than an end portion of the first wall. The first wall and the second wall can move towards each other in the first direction in response to a force applied on the body in a second direction.

Abstract: In some aspects, the techniques described herein relate to a refrigerant compressor, including: a shrouded impeller including a passageway permitting refrigerant to flow from a location radially outside a shroud of the shrouded impeller to a location radially inside the shroud.

Abstract: A reference voltage generation circuit includes a voltage conversion circuit, a voltage divider, a reference voltage generator, an error amplifier, and a control circuit. The voltage conversion circuit is configured to convert an input voltage to an output voltage according to a first control signal. The voltage divider performs a voltage division operation on the output voltage to generate first and second feedback voltages. The reference voltage generator is configured to generate a reference voltage according to a second control signal. The error amplifier is configured to generate the first control signal according to a difference between the reference voltage and the first feedback voltage. The control circuit is configured to generate the second control signal according to the second feedback voltage and the reference voltage. In response to the second feedback voltage being decreasing gradually, the reference voltage is adjusted to trace the second feedback voltage.

Abstract: The present invention provides a ramp signal generator of a SMPS. The ramp signal generator includes a filter and a charge pump. The filter is configured to filter a PWM signal to generate a filtered PWM signal. The charge pump is configured to receive the PWM signal and the filtered PWM signal to generate an output current, wherein the output current is used to generate a ramp signal, and the ramp signal is used for a PWM signal generator to generate the PWM signal.

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunneling junction (MTJ) on a substrate, a first top electrode on the MTJ, a second top electrode on and directly contacting the first top electrode, and a spacer adjacent to the MTJ. Preferably, the first top electrode includes a gradient concentration while the second top electrode includes a non-gradient concentration.

Abstract: A buck converter includes a first transistor, a second transistor, an inductor and a capacitor. The first transistor, the second transistor and the inductor are coupled to a switching node. A method includes charging the switching node for a predetermined duration using a first charging current, detecting a voltage at the switching node to obtain a first detection voltage, and determining the connection status of the inductor according to at least the first detection voltage.

Abstract: An electrode active layer is disclosed that includes a network of high aspect ratio carbon elements (e.g., carbon nanotubes, carbon nanotube bundles, graphene flakes, or the like) that provides a highly electrically conductive scaffold that entangles or enmeshes the active material, thereby supporting the layer. A surface treatment can be applied to the high aspect ratio carbon elements to promote adhesion to the active material and any underlying electrode layers improving the overall cohesion and mechanical stability of the active layer. This surface treatment forms only a thin (in some cases even monomolecular) layer on the network, leaving the large void spaces that are free of any bulk binder material and so may instead be filled with active material. The resulting active layer may be formed with excellent mechanical stability even at large thickness and high active material mass loading.

Abstract: In some aspects, the techniques described herein relate to a refrigerant compressor, including: a stator; a rotor configured to rotate with respect to the stator; and at least one step seal between the rotor and the stator, wherein the step seal includes a first tooth and a second tooth extending from the rotor toward the stator, wherein a downstream surface of the first tooth and an upstream surface of the second tooth are arranged at an angle relative to one another, wherein the angle is less than 90°.

Abstract: Systems, methods, and software described herein generate and manage a compressed database using a dictionary and a Huffman data structure. In one implementation, a method includes determining a frequency that each string of a plurality of strings in a segment of a database appears in the segment. The method further provides for identifying a first subset of strings with the highest frequency of appearance in the data structure and generating a dictionary for the first subset of strings. The method also includes generating a Huffman data structure based on the frequencies associated with the plurality of strings and generating a compressed segment based on the dictionary and the Huffman data structure.