Abstract: A semiconductor device may be provided. The semiconductor device may be configured for detecting a defect of a fuse set. The semiconductor device may include a pseudo initial signal generator configured to generate pseudo initial information on the basis of a test mode signal. The semiconductor device may include a fuse-set defect detector configured to compare fuse-set information of a fuse set or the pseudo initial information with a reference value on the basis of a fuse-set address, and detect a defect of the fuse set.

Abstract: A semiconductor device may be provided. The semiconductor device may be configured for detecting a defect of a fuse set. The semiconductor device may include a pseudo initial signal generator configured to generate pseudo initial information on the basis of a test mode signal. The semiconductor device may include a fuse-set defect detector configured to compare fuse-set information of a fuse set or the pseudo initial information with a reference value on the basis of a fuse-set address, and detect a defect of the fuse set.

Abstract: Disclosed is a method for manufacturing a semiconductor device. The method comprises the steps of forming a bit line contact plug and a storage electrode contact plug which are connected to a semiconductor substrate; etching a capping nitride film above a word line which is positioned at a peripheral circuit part of the semiconductor substrate; forming a bit line which is connected to the bit line contact plug and the word line; etching a capping nitride film above the bit line of the peripheral circuit part; and forming a metal wiring contact hole which reveals the semiconductor substrate, the word line and the bit line.