Abstract: An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.

Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.

Abstract: An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.

Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.

Abstract: The present invention relates to various compounds capable of temporarily hardening soft tissue for surgical suturing of the soft tissue. The compounds according to the present invention can temporarily increase the hardness or tension of soft tissue, thereby improving the suturing efficiency during suturing of the soft tissue, thereby preventing aftereffects or the like from occurring due to insufficient anastomosis. In addition, the compounds according to the present invention can temporarily increase the hardness or tension of soft tissue, particularly pancreas, thereby increasing the suturing efficiency during pancreaticoduodenectomy and effectively preventing pancreatic leakage.

Abstract: A transconductance test method implemented in a flash memory device detects memory cells with low transconductance and provides an output identifying memory cells, if any, having been classified as having a low transconductance (low gm). In some embodiments, the transconductance test method implements multi-step testing using a pair of gate bias levels for each test step. Accurate detection of memory cells with low transconductance can be realized.

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

Abstract: The present invention relates to a method of manufacturing an integrated structure using microbubbles, and an integrated structure manufactured by the method.

Abstract: A magnetic resonance imaging (MRI) apparatus comprises an image processor configured to generate a cross-sectional image of an object and configured to detect a lesion contained in the cross-sectional image and a size of the lesion, and a display configured to display the cross-sectional image and a marker indicating the lesion, and the display displays the marker in the vicinity of the lesion, and when the cross-sectional image is a cross-sectional image showing the largest size of the lesion, configured to display a first color marker in the vicinity of the lesion, and when the cross-sectional image is not a cross-sectional image showing the largest size of the lesion, configured to display a second color marker in the vicinity of the lesion.

Abstract: Provided is an anode active material for a lithium (Li) secondary battery, the material including silicon (Si)-based alloy powder, a carbonized layer at least partially surrounding the Si-based alloy powder serving as cores, and carbon nanofibers (CNFs) extending outward from a surface of the Si-based alloy powder through the carbonized layer.

Abstract: A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.

Abstract: A radio frequency switch circuit includes: a radio frequency switch configured to control a radio frequency signal passing between a signal port and an antenna port; a first buffer configured to generate the first control voltage in response to a second control voltage; a second buffer configured to receive a third control voltage and configured to generate the second control voltage in response to the third control voltage; a first power supplier configured to supply a first high voltage to the first buffer and configured to supply a second high voltage to the second buffer; and a second power supplier configured to supply a first low voltage to the first buffer and configured to supply a second low voltage to the second buffer.

Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.

Abstract: There is provided an organic/inorganic complex coating porous separator including a porous substrate, and an organic/inorganic complex coating layer formed in a single layer or multiple layers on a single surface or both surfaces of the porous substrate or at least a part of a pore portion of the porous substrate using a coating solution comprising a binder dispersed or suspended in a certain size and selectively comprising inorganic particles, and a secondary battery including the same. According to the present invention, since the coating solution comprising the binder dispersed in a certain size or less in a solvent is coated/dried on the porous substrate, a organic/inorganic complex coating porous separator having excellent air permeability and adhesive strength and a secondary battery including the organic/inorganic complex coating porous separator are provided.

Abstract: An electronic device and an operating method thereof are provided. The electronic device includes a camera module, a memory module, and a processor operatively coupled with the camera module and the memory module. The processor acquires an image through the camera module, extracts distance information based on the acquired image, determines an image processing technique for an object based on the extracted distance information, applies the determined image processing technique to the acquired image to generate a new image, and displays the new image.

Abstract: The present disclosure discloses a method for improving the skin condition or anti-microorganisms or anti-oxidation using Lactobacillus sakei MD_honeysuckle (accession number: KCTC 12675BP) derived from Lonicera japonica Thunb. A composition containing the strain or a cultured product thereof, or an extract thereof as an active ingredient has superior DPPH radical scavenging activity and antimicrobial activity against pathogenic microorganisms, has a high total polyphenol content and is capable of inhibiting the growth of melanocytes. Accordingly, the composition of the present disclosure is effective in preventing aging, improving skin wrinkles, whitening skin, fighting against microorganisms and fighting against oxidation and can be widely used in cosmetic compositions, pharmaceutical compositions or health food compositions where such effects are required.

Abstract: The present disclosure relates to an engine control device for hybrid construction machinery, and more particularly, and an object of the present disclosure is to, in a hybrid excavator, in which a swing apparatus is electrically driven by being separated from a hydraulic power train system in the related art, satisfy a minimum rotational speed of an engine auxiliary motor which is necessary to satisfy a target charging amount required for an energy storage device, and improve fuel efficiency by removing unnecessary energy loss at low loads by controlling a rotational speed of an engine to be lower than a rotational speed of an engine determined based on a dial input and a mode input in the related art, in a case where a target power generation amount of the engine auxiliary motor is small in a low-load work situation.

Abstract: A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.