Abstract: A method of calculating a collision risk of a ship according to an embodiment of the present disclosure may include: calculating an available velocity area based on maneuvering performance of a host ship; calculating a velocity obstacle area where there is a possibility of collision between an object and the host ship; and calculating a collision risk based on at least one of the available velocity area, the velocity obstacle area, and a preset weight.

Abstract: The present exemplary embodiments relate to a graphite-based negative electrode material, a method of manufacturing the same, a negative electrode including the same, and a lithium secondary battery including the same. The graphite-based negative electrode material according to an exemplary embodiment includes: a graphite oxide obtained by oxidizing a surface of first graphite, and a graphite coating including second graphite and low crystalline carbon positioned on a surface of the second graphite, wherein the graphite coating to the graphite oxide is 1/9 to 1/3.

Abstract: A method of preparing a core-shell structured quantum dot particle includes the steps of (a) preparing a core of quantum dot particle containing indium (In) and phosphorus (P) and (b) forming a shell by reacting the core of the quantum dot particles prepared in step (a), a zinc oxo cluster represented by Formula 1 below, and at least one anion precursor containing a group 16 element.

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

Abstract: An electrode assembly includes electrodes and a first separator sheet in which the electrodes and first separator sheet portions of the first separator sheet are alternately stacked. The electrode comprises a first electrode and a second electrode. The first separator sheet has a zigzag shape formed by being folded at least twice. A length of the second electrode is shorter than a length of the first electrode. the electrode assembly includes a molding member located between a first section of the first separator sheet wrapping the second electrode and a first outer side surface of the electrode assembly and between the second electrode and a second outer side surface of the electrode assembly.

Abstract: The present invention relates to pharmaceutical compositions for treating blood cancer, which includes 4?-thio-5-aza-2?-deoxycytidine (Aza-T-dCyd), and methods of treating blood cancer using a composition for oral administration that includes Aza-T-dCyd. The present invention provides a significant blood cancer therapeutic effect without having toxicity in a blood cancer mouse model or a human even with the Aza-T-dCyd dose conventionally known to have toxicity. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: A vehicle lamp that achieves a slim design while forming an optimal beam pattern generates a beam pattern using a plurality of lamp modules. The plurality of lamp modules are arranged in one direction, and each of the plurality of lamp modules includes a light source that generate light; an optical guide unit, which guides incident light from the light source to be emitted forward; and an optical lens, which transmits the incident light from the optical guide unit therethrough to allow the beam pattern to be generated.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes: a window; a first pattern on a portion of the window; a second pattern on at least a portion of the first pattern and having a higher surface free energy than the first pattern; an adhesive layer on the window, at least a portion of the adhesive layer being on the second pattern to be in contact with a surface of the second pattern; and a display panel on the adhesive layer.

Abstract: Power semiconductor device with reduced loss and manufacturing method the same disclosed. Power semiconductor device include a first drift region of a first conductivity type, a second drift region of the first conductivity type formed by epitaxially growing on the first drift region and a plurality of buried ion regions of a second conductivity type formed to be buried in the second drift region.

Abstract: Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereof disclosed. The power semiconductor device includes a drift region of a first conductivity type, a plurality of body regions of a second conductivity type, being formed to be spaced apart from each other with a preset WS in a horizontal direction in an upper region of the drift region, a JFET region of the first conductivity type and a low-resistance region of the first conductivity type, being formed in a separation space between adjacent body regions to contact their side surfaces with the adjacent body regions and a source region of the first conductivity type, being formed in a surface region in the body region in contact with the low-resistance region to be spaced apart from the low-resistance region by a preset channel length.

Abstract: The present invention relates to a perovskite solar cell and a tandem solar cell comprising the same, characterized in that the perovskite solar cell comprises: a substrate; a transparent electrode; a hole transport layer; a perovskite light absorption layer, an electron transport layer; and a metal electrode, wherein the electron transport layer is a graded thin film in which a chemical binding state of elements constituting the electron transport layer gradually changes from the lower portion thereof toward the upper portion thereof.

Abstract: A vehicle lamp that achieves a slim design while forming an optimal beam pattern generates a beam pattern using a plurality of lamp modules. The plurality of lamp modules are arranged in one direction, and each of the plurality of lamp modules includes a light source that generate light; an optical guide unit, which guides incident light from the light source to be emitted forward; and an optical lens, which transmits the incident light from the optical guide unit therethrough to allow the beam pattern to be generated.

Abstract: Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereof disclosed. The power semiconductor device includes a drift region of a first conductivity type, a plurality of body regions of a second conductivity type, being formed to be spaced apart from each other with a preset WS in a horizontal direction in an upper region of the drift region, a JFET region of the first conductivity type and a low-resistance region of the first conductivity type, being formed in a separation space between adjacent body regions to contact their side surfaces with the adjacent body regions and a source region of the first conductivity type, being formed in a surface region in the body region in contact with the low-resistance region to be spaced apart from the low-resistance region by a preset channel length.

Abstract: A fine particle separating apparatus includes a first filter having a first mesh, the first filter having a first section and a second section with the first mesh therebetween and rotatably mounted in the first filter part. A first flow path allows sludge to flow into the first filter, a second flow path allows an effluent from the first filter party to flow therein, and a third flow path is provided to discharge the effluent from the second flow path to the outside. At least a portion of the effluent flowing into the second flow path is provided to the first filter part in a fluid loop along a fourth flow path, and a fifth flow path is defined in the first section to allow the effluent from the fourth flow path to pass through the first filter part. A storage tank and a pump are also provided.

Abstract: A lamp module includes a light source unit that generates light; and a light guide unit that emits at least a portion of the light incident from the light source unit to generate a beam pattern. The light guide unit comprises a light incident portion configured to receive at least a portion of the light incident from the light source unit; a light emitting portion configured to emit at least a portion of the light incident through the light incident portion; and a transmission portion disposed between the light incident portion and the light emitting portion and configured to transmit at least a portion of the light incident through the light incident portion to the light emitting portion. The transmission portion comprises a shield portion including an edge portion formed along a rear focal plane of the light emitting portion and configured to obstruct a portion of the light.

Abstract: The present invention relates to a biaryl derivative compound, which exhibits the activity of a diacylglycerol acyltransferase 2 (DGAT2) inhibitor and is represented by chemical formula (1), a pharmaceutical composition comprising same as an active ingredient, and a use thereof.

Abstract: Power semiconductor device with reduced loss and manufacturing method the same disclosed. Power semiconductor device include a first drift region of a first conductivity type, a second drift region of the first conductivity type formed by epitaxially growing on the first drift region and a plurality of buried ion regions of a second conductivity type formed to be buried in the second drift region.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: A lamp module includes a light source unit that generates light; and a light guide unit that emits at least a portion of the light incident from the light source unit to generate a beam pattern. The light guide unit comprises a light incident portion configured to receive at least a portion of the light incident from the light source unit; a light emitting portion configured to emit at least a portion of the light incident through the light incident portion; and a transmission portion disposed between the light incident portion and the light emitting portion and configured to transmit at least a portion of the light incident through the light incident portion to the light emitting portion. The transmission portion comprises a shield portion including an edge portion formed along a rear focal plane of the light emitting portion and configured to obstruct a portion of the light.