Abstract: Embodiments of semiconductor fabrication methods are disclosed. In an example, a method for forming a mark for locating patterns in semiconductor fabrication is disclosed. A wafer is divided into a plurality of shots. Each of the plurality of shots includes a semiconductor chip die. Four quarters of a locking corner mark are subsequently patterned, respectively, at four corners of four adjacent shots of the plurality of shots. Each quarter of the locking corner mark is symmetric to adjacent quarters of the locking corner mark and is separated from the adjacent quarters of the locking corner mark by a nominally same distance. The locking corner mark is set as an origin for locating patterns in at least one of the four adjacent shots in semiconductor fabrication.

Abstract: Embodiments of semiconductor fabrication methods are disclosed. In an example, a method for forming a mark for locating patterns in semiconductor fabrication is disclosed. A wafer is divided into a plurality of shots. Each of the plurality of shots includes a semiconductor chip die. Four quarters of a locking corner mark are subsequently patterned, respectively, at four corners of four adjacent shots of the plurality of shots. Each quarter of the locking corner mark is symmetric to adjacent quarters of the locking corner mark and is separated from the adjacent quarters of the locking corner mark by a nominally same distance. The locking corner mark is set as an origin for locating patterns in at least one of the four adjacent shots in semiconductor fabrication.

Abstract: The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material. Using a vapor phase reaction apparatus shown in FIG. 1, ammonia gas was fed from a reactor 2 heated at from 300 to 500° C. and maintained at that temperature by a heating section 1 via a feeding tube 4 while being regulated by a flow regulator 3. At the same time, while being regulated by the flow regulator 5, nitrogen gas containing an organic aluminum compound is fed via a feeding tube 6 to obtain an aluminum nitride powder. The aluminum nitride powder is subjected to a heat treatment at from 1100 to 1500° C. in a reducing gas atmosphere and/or an inert gas atmosphere to obtain an aggregate aluminum nitride powder.

Abstract: The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material. Using a vapor phase reaction apparatus shown in FIG. 1, ammonia gas was fed from a reactor 2 heated at from 300 to 500° C. and maintained at that temperature by a heating section 1 via a feeding tube 4 while being regulated by a flow regulator 3. At the same time, while being regulated by the flow regulator 5, nitrogen gas containing an organic aluminum compound is fed via a feeding tube 6 to obtain an aluminum nitride powder. The aluminum nitride powder is subjected to a heat treatment at from 1100 to 1500° C. in a reducing gas atmosphere and/or an inert gas atmosphere to obtain an aggregate aluminum nitride powder.