Abstract: A high-power edge-emitting semiconductor laser with asymmetric structure, comprising: a substrate layer; a lower cladding layer; a lower optical waveguide layer; a first lower barrier layer; a quantum well layer; a first upper barrier layer; an upper optical waveguide layer, and make the thickness of the upper optical waveguide layer be below 300 nm, the thickness of the upper optical waveguide layer is ?˜½ of the thickness of the lower optical waveguide layer; an upper cladding layer, and make the thickness of the upper cladding layer be below 900 nm, the thickness of the upper cladding layer is ?˜½ of the thickness of the lower cladding layer; and an ohmic contact layer formed on the upper cladding layer.