Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

Abstract: A switch device includes first and second switch units that are coupled respectively to first and second output terminals. Each of the first and second switch units includes a plurality of diodes and at least one semiconductor-controlled rectifier (SCR), where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough to a corresponding one of the first and second output terminals when each thereof operates in an ON state, and where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough from a corresponding one of the first and second output terminals when each thereof operates in an ON state.

Abstract: A switch device includes first and second switch units that are coupled respectively to first and second output terminals. Each of the first and second switch units includes a plurality of diodes and at least one semiconductor-controlled rectifier (SCR), where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough to a corresponding one of the first and second output terminals when each thereof operates in an ON state, and where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough from a corresponding one of the first and second output terminals when each thereof operates in an ON state.

Abstract: The invention provides a method of integrating a server using alternating current power (AC server) into a server system using direct current power (DC server system) and an alternative junction device therefor. The integrating method includes: providing an AC server having a plug-in power supply unit; providing an alternative junction device for replacing the plug-in power supply unit; extracting the plug-in power supply unit from the AC server; plugging the alternative junction device into the AC server; and coupling the alternative junction device to a direct current power supply unit of a DC server system. The alternative junction device includes: a shell to be installed into a containing slot of an AC server; an output coupled to a DC input of a processor of the AC server when the shell is installed into the containing slot; and an input coupled to a DC power supply unit of a DC server system.

Abstract: The invention provides a method of integrating a server using alternating current power (AC server) into a server system using direct current power (DC server system) and an alternative junction device therefor. The integrating method includes: providing an AC server having a plug-in power supply unit; providing an alternative junction device for replacing the plug-in power supply unit; extracting the plug-in power supply unit from the AC server; plugging the alternative junction device into the AC server; and coupling the alternative junction device to a direct current power supply unit of a DC server system. The alternative junction device includes: a shell to be installed into a containing slot of an AC server; an output coupled to a DC input of a processor of the AC server when the shell is installed into the containing slot; and an input coupled to a DC power supply unit of a DC server system.