Abstract: Proposed are an apparatus for and a method of controlling energy for a hybrid electric vehicle. The apparatus includes an input module receiving a traveling condition and a vehicular characteristic of the vehicle, a memory storing an execution program and a parameter that are necessary for carrying out an energy management strategy, and a processor operatively coupled to the input module and the memory, wherein the processor receives the traveling condition and the vehicular characteristic through the input module, according to the energy management strategy, and then determines, based on a first control algorithm, whether or not the vehicle is drivable in an EV mode, wherein, when the vehicle is drivable, the processor enables the vehicle to drive in the EV mode, and wherein, when the vehicle is not drivable, the processor determines and outputs a drive mode and a torque distribution ratio based on a second control algorithm.

Abstract: A semiconductor package includes a semiconductor chip, an encapsulant, and an interconnection member. The semiconductor chip has connection pads. The encapsulant encapsulates a portion of the semiconductor chip. The interconnection member includes a first insulating layer disposed on the encapsulant and a portion of the semiconductor chip, a redistribution layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and the redistribution layer. The redistribution layer is electrically connected to the connection pads of the semiconductor chip, and a thickness of the second insulating layer is greater than a thickness of the first insulating layer.

Abstract: A semiconductor package includes a semiconductor chip, an encapsulant, and an interconnection member. The semiconductor chip has connection pads. The encapsulant encapsulates a portion of the semiconductor chip. The interconnection member includes a first insulating layer disposed on the encapsulant and a portion of the semiconductor chip, a redistribution layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and the redistribution layer. The redistribution layer is electrically connected to the connection pads of the semiconductor chip, and a thickness of the second insulating layer is greater than a thickness of the first insulating layer.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member.