Patents by Inventor Jin-Ywan Lin
Jin-Ywan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20090200560Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.Type: ApplicationFiled: January 16, 2009Publication date: August 13, 2009Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Chuan-Cheng Tu
-
Publication number: 20090108286Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: ApplicationFiled: December 23, 2008Publication date: April 30, 2009Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Jen-Chau Wu, Chih-Chiang Lu, Wei-Chih Peng, Ching-Pu Tai, Shih-I Chen
-
Patent number: 7488988Abstract: A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.Type: GrantFiled: October 17, 2006Date of Patent: February 10, 2009Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Chuan-Cheng Tu
-
Publication number: 20090020776Abstract: A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.Type: ApplicationFiled: July 2, 2008Publication date: January 22, 2009Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Tzer-Perng Chen, Pai-Hsiang Wang, Chih-Chiang Lu
-
Publication number: 20080230791Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan LIN, Jen-Chau Wu, Chih-Chiang LU, Wei-Chih Peng, Jing-Fu Dai, Shih-Yi Chen
-
Publication number: 20080054290Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.Type: ApplicationFiled: September 5, 2007Publication date: March 6, 2008Applicant: EPISTAR CORPORATIONInventors: Yuh-Ren Shieh, Hsuan-Cheng Fan, Jin-Ywan Lin, Chung-Yi Hsu, Chung-Kuei Huang
-
Publication number: 20070090377Abstract: A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.Type: ApplicationFiled: October 17, 2006Publication date: April 26, 2007Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Chuan-Cheng Tu
-
Patent number: 7148517Abstract: A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.Type: GrantFiled: September 24, 2004Date of Patent: December 12, 2006Assignee: Epistar CorporationInventors: Chung-Cheng Tu, Jin-Ywan Lin
-
Patent number: 6998642Abstract: A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer.Type: GrantFiled: June 29, 2004Date of Patent: February 14, 2006Assignee: United Epitaxy Co., Ltd.Inventors: Jin-Ywan Lin, Chung-Cheng Tu
-
Publication number: 20050242358Abstract: A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.Type: ApplicationFiled: September 24, 2004Publication date: November 3, 2005Inventors: Chung-Cheng Tu, Jin-Ywan Lin
-
Patent number: 6900068Abstract: A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.Type: GrantFiled: August 20, 2004Date of Patent: May 31, 2005Assignee: United Epitaxy Co., Ltd.Inventors: Jin-Ywan Lin, Huan-Pin Huang, Chung-Cheng Tu
-
Publication number: 20050062049Abstract: A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer.Type: ApplicationFiled: June 29, 2004Publication date: March 24, 2005Inventors: Jin-Ywan Lin, Chung-Cheng Tu
-
Patent number: 6853011Abstract: A light emitting epi-layer structure contains a temporary substrate of absorption light type on one side. The other side thereof is then adhered to a transparent substrate of light absorption free by BCB bonding layer. After that, the light absorption substrate portion is removed. The resulted light emitting structure is then patterned to form a connection channel to connect the first ohmic contact electrode and form an isolation trench to separate the active layer of the light emitting structure into two parts. Thereafter, a second ohmic contact electrode on the cladding layer and a bonding metal layer filled in the first channel and on second ohmic contact electrode are successively formed. The resulted LED structure is hence convenient for flip-chip package since two bonding metal layers have the same altitude.Type: GrantFiled: January 30, 2003Date of Patent: February 8, 2005Assignee: United Epitaxy Co., Ltd.Inventor: Jin-Ywan Lin
-
Publication number: 20050017254Abstract: A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.Type: ApplicationFiled: August 20, 2004Publication date: January 27, 2005Applicant: United Epitaxy Co., Ltd.Inventors: Jin-Ywan Lin, Huan-Pin Huang, Chung-Cheng Tu
-
Patent number: 6838704Abstract: A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.Type: GrantFiled: May 13, 2003Date of Patent: January 4, 2005Assignee: United Epitaxy Co., Ltd.Inventors: Jin-Ywan Lin, Huan-Pin Huang, Chung-Cheng Tu
-
Publication number: 20040124428Abstract: A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.Type: ApplicationFiled: May 13, 2003Publication date: July 1, 2004Applicant: United Epitaxy Co., Ltd.Inventors: Jin-Ywan Lin, Huan-Pin Huang, Chung-Cheng Tu
-
Publication number: 20040090179Abstract: A light emitting epi-layer structure contains a temporary substrate of absorption light type on one side. The other side thereof is then adhered to a transparent substrate of light absorption free by BCB bonding layer. After that, the light absorption substrate portion is removed. The resulted light emitting structure is then patterned to form a connection channel to connect the first ohmic contact electrode and form an isolation trench to separate the active layer of the light emitting structure into two parts. Thereafter, a second ohmic contact electrode on the cladding layer and a bonding metal layer filled in the first channel and on second ohmic contact electrode are successively formed. The resulted LED structure is hence convenient for flip-chip package since two bonding metal layers have the same altitude.Type: ApplicationFiled: January 30, 2003Publication date: May 13, 2004Applicant: United Epitaxy Co. Ltd.Inventor: Jin-Ywan Lin
-
Patent number: 6583448Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.Type: GrantFiled: July 22, 2002Date of Patent: June 24, 2003Assignee: United Epitaxy Company, Ltd.Inventors: Jin-Ywan Lin, Kuang-Neng Yang
-
Publication number: 20030047737Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.Type: ApplicationFiled: July 22, 2002Publication date: March 13, 2003Inventors: Jin-Ywan Lin, Kuang-Neng Yang
-
Patent number: 6462358Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.Type: GrantFiled: February 6, 2002Date of Patent: October 8, 2002Assignee: United Epitaxy Company, Ltd.Inventors: Jin-Ywan Lin, Kuang-Neng Yang