Abstract: The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.

Abstract: The functional fluids of the present invention comprise about 50 parts by weight to about 99 parts by weight of a glycol component and about 0.3 parts by weight to about 10 parts by weight of one or more additives including a phosphate content. Desirably, in one aspect of this invention, the functional fluid composition exhibits an average scar width according to ASTM D 2670 (100 lb break-in for 1 min, 200 lb load for 30 minutes) that ranges from about 0.05 mm to about 0.45 mm, an average tooth count according to ASTM D 2670 (100 lb break-in for 1 min, 200 lb load for 30 minutes) of less than about 15, or both.

Abstract: The fluid compositions of the present invention include an glycol component that includes a mixture of glycols according the formula: Wherein, typically, at least one of R2, R3, R4 and R5 is an alkyl group. The physical properties of the compositions include a high dry equilibrium reflux boiling point (ERBP), a high wet equilibrium reflux boiling point (WERBP), a low temperature viscosity or any combination thereof. These compositions are particularly useful because their physical properties (e.g., WERBP, ERBP, and low temperature viscosity) meet or exceed the provisions for DOT 3, 4, or 5 brake fluids.

Abstract: The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.

Abstract: A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

Abstract: One embodiment of the present invention relates to a method of forming an isolation structure. During this method, an isolation trench is formed within a semiconductor body. After this trench is formed, it is filled by performing multiple high-frequency plasma depositions to deposit multiple dielectric layers over the semiconductor body. A first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.

Abstract: The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.

Abstract: The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes, among other steps, forming a gate structure over a substrate, the gate structure having source/drain regions proximate thereto and in, on or over the substrate, forming a pre-metal dielectric layer over the gate structure and source/drain regions, and subjecting the pre-metal dielectric layer to an energy beam treatment, the energy beam treatment configured to change a stress of the pre-metal dielectric layer, and thus change a stress in the substrate therebelow.

Abstract: The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.

Abstract: Quinolone carboxylic acid derivatives of formula (I) wherein Ar is an optionally substituted phenyl, pyridyl, or pyrimidinyl group and the substituent groups R1, R4, R10, R11, R19, and R20 are as defined in the specification, pharmaceutical compositions containing them, and methods of using them in treatment of hyperproliferative diseases such as cancer are disclosed and claimed.

Abstract: A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

Abstract: A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: A method (10) of forming an isolation structure (140, 142) in a semiconductor substrate (102) is disclosed, wherein the isolation structure (140, 142) can be formed in a controlled manner so as to regulate stresses exerted by the structure on one or more active regions (106) of the substrate (102) located adjacent to the structure (140, 142).

Abstract: The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.

Abstract: A dissoluble oral tablet of calcium supplement and the method of making the product are provided. This calcium supplement comprises an exposure area and a coating covered area. The surface ratio between the exposure area and the coating covered area is about 1:1 to 1:12. The exposure area can be a hole, an opening, or their combination. The preferred samples contain about CaCO3 200-600 mg with MgCL2 50-150 mg or MgSO4 50-100 mg. The favorable CaCO3 tablet reaction with stomach acid is: CaCO3+2HCL=CaCL2+H2CO3=Ca+++2CL?+H2O+CO2 ?. The CO2 is the natural bubble broker. The stomach HCL is the natural CaCL2 maker.

Abstract: A non-invasive percutaneously acting apparatus for relieving constipation or diarrhea and appropriately stimulating peristaltic movement in the human gastro-intestinal (GI) tract. The apparatus includes an annular or toroidal shaped hollow housing having a working surface on one side thereof. A multi-point electrode generally coextensive with the working surface includes a plurality of point electrodes each separately mounted in and preferably biasingly moveably extend outwardly from the working surface. A d.c. pulse generator selectively and sequentially connectable to the point electrodes whereby, when the working surface is positioned against or in close proximity to the skin over the GI tract, the point electrodes deliver electrical pulses percutaneously and sequentially moving from one point electrode to the next adjacent point electrode repeatedly around the working surface.

Abstract: The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.

Abstract: A support frame structure mounted inside the housing of a computer system for supporting electronic drives is disclosed to include a plurality of upright partition plates affixed to the bottom panel between two upright side panels of the housing, a cover plate fastened to the upright side panels of the housing and covered on the upright partition plates, and a detachable upright back panel, which has a bottom side engaged into notched locating strips at the back side of each upright partition plate and a top side terminating in a forwardly extended bend, which is covered on a rear part of the top of each upright partition plate and affixed thereto with a screw.