Abstract: A method of making a microelectromechanical (MEM) device using a standard silicon wafer, rather than an SOI wafer, includes selectively implanting a dopant in regions of the standard wafer, to thereby form heavily doped regions therein. The heavily doped regions are then converted to porous silicon regions. An electrical isolation layer is selectively deposited on the wafer and over a portion of one or more of the porous silicon regions. An epitaxial layer is grown over the porous silicon regions and the electrical isolation area, and device elements are formed in the epitaxial layer. Thereafter, at least portions of the porous silicon regions are removed, to thereby release the formed device elements.