Abstract: Disclosed are N-{1-[3-(2-ethoxy-5-(4-ethylpiperazinyl)sulfonylphenyl)-4,5-dihydro-5-oxo-1,2,4-triazin-6-yl]ethyl}butyramide (which is represented by formula III and utilized for preparing vardenafil), its preparation method, intermediates during preparation procedure, preparation method for such intermediates and a method for preparing vardenafil from the compound.

Abstract: The present invention relates to a method for preparing 6-substituted amino-3-cyanoquinoline compounds (compound A for short) and the intermediates thereof, more particularly, to a compound of the following formula (I), the preparation method thereof, the intermediates thereof and use thereof for preparing the compound A. The compound of the formula (I) is cyclized in the presence of an alkali to give a compound of formula A, wherein W is OH; or the compound of the formula (I) is cyclized in the presence of an alkali, and then chlorinated to give a compound of the formula A, wherein W is Cl. Compared with the known methods in the literature, the method for preparing the compound A from the compound of formula (I) according to the present invention can avoid using high-temperature condition and high boiling point solvents, and is safe and environment-friendly, mild in reaction condition, easy in operation with a high yield and high product purity.

Abstract: Disclosed are N-{1-[3-(2-ethoxy-5-(4-ethylpiperazinyl)sulfonylphenyl)-4,5-dihydro-5-oxo-1,2,4-triazin-6-yl]ethyl}butyramide (which is represented by formula III), its preparation method, intermediates during preparation procedure, preparation method for such intermediates and a method for preparing vardenafil from the compound. In the method for preparing vardenafil, a chloro-sulfonation reaction carries out in the early stage of the preparation procedure.

Abstract: Disclosed is a novel design of a fully integrated UWB transmitter. The transmitter includes a pulse generator, a pulse modulator, and an ultra-wideband drive amplifier. A new low voltage low power pulse generator circuit is disclosed which can be fully integrated in CMOS or BiCMOS process. This circuit includes a squaring stage, an exponential stage, and a second-order derivative stage. Based on this, PPM, BPSK and PAM pulse modulator circuits and system are disclosed. The modulated pulse is symmetrical second-order derivative Gaussian pulses with a bandwidth up to 5 GHz and having sufficient swing for UWB applications. An ultra-wideband driver amplifier is proposed to amplify the modulator output and drive the antenna. For the driver amplifier, common source resistor and inductor shunt feedback with current reuse technique is employed to achieve the ultra-wideband bandwidth, high gain, and providing matching for the antenna simultaneously.

Abstract: A reconfigurable RF transceiver capable of supporting MB-OFDM, DS-UWB, and impulse radio in different operation modes.

Abstract: Disclosed is a novel design of a fully integrated UWB transmitter. The transmitter includes a pulse generator, a pulse modulator, and an ultra-wideband drive amplifier. A new low voltage low power pulse generator circuit is disclosed which can be fully integrated in CMOS or BiCMOS process. This circuit includes a squaring stage, an exponential stage, and a second-order derivative stage. Based on this, PPM, BPSK and PAM pulse modulator circuits and system are disclosed. The modulated pulse is symmetrical second-order derivative Gaussian pulses with a bandwidth up to 5 GHz and having sufficient swing for UWB applications. An ultra-wideband driver amplifier is proposed to amplify the modulator output and drive the antenna. For the driver amplifier, common source resistor and inductor shunt feedback with current reuse technique is employed to achieve the ultra-wideband bandwidth, high gain, and providing matching for the antenna simultaneously.

Abstract: A method of making a microelectromechanical (MEM) device using a standard silicon wafer, rather than an SOI wafer, includes selectively implanting a dopant in regions of the standard wafer, to thereby form heavily doped regions therein. The heavily doped regions are then converted to porous silicon regions. An electrical isolation layer is selectively deposited on the wafer and over a portion of one or more of the porous silicon regions. An epitaxial layer is grown over the porous silicon regions and the electrical isolation area, and device elements are formed in the epitaxial layer. Thereafter, at least portions of the porous silicon regions are removed, to thereby release the formed device elements.