Patents by Inventor Jina Shumate
Jina Shumate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10326013Abstract: A method is provided for forming an integrated circuit (IC) structure including trench-based semiconductor devices, e.g., trench FETs, having front-side drain contacts. The method may include forming an epitaxy region, forming a poly gate trench in the epitaxy region, forming a drain contact trench through the poly gate trench and extending below the poly gate trench, forming a poly gate in the poly gate trench, forming a front-side drain contact in the drain contact trench, and forming a source region in the epitaxy region adjacent the poly gate. The device may define a drift region from the poly gate/source intersection to the front-side drain contact. The drift region may be located within the epitaxy layer, without extending into an underlying substrate or transition layer. The front-side drain contact depth may be selected to influence the device breakdown voltage. The front-side drain contacts may allow flip-chip mounting of the IC structure.Type: GrantFiled: November 21, 2017Date of Patent: June 18, 2019Assignee: MICROCHIP TECHNOLOGY INCORPORATEDInventors: Greg Dix, Jina Shumate, Eric Peterson, Rajesh Nayak
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Publication number: 20180145170Abstract: A method is provided for forming an integrated circuit (IC) structure including trench-based semiconductor devices, e.g., trench FETs, having front-side drain contacts. The method may include forming an epitaxy region, forming a poly gate trench in the epitaxy region, forming a drain contact trench through the poly gate trench and extending below the poly gate trench, forming a poly gate in the poly gate trench, forming a front-side drain contact in the drain contact trench, and forming a source region in the epitaxy region adjacent the poly gate. The device may define a drift region from the poly gate/source intersection to the front-side drain contact. The drift region may be located within the epitaxy layer, without extending into an underlying substrate or transition layer. The front-side drain contact depth may be selected to influence the device breakdown voltage. The front-side drain contacts may allow flip-chip mounting of the IC structure.Type: ApplicationFiled: November 21, 2017Publication date: May 24, 2018Applicant: Microchip Technology IncorporatedInventors: Greg Dix, Jina Shumate, Eric Peterson, Rajesh Nayak
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Publication number: 20180145171Abstract: An integrated circuit (IC) structure may include one or more trench-based semiconductor devices, e.g., field-effect transistors (trench FETs), having a front-side drain contact. Each semiconductor device may include an epitaxy layer, a doped source region in the epitaxy layer, a front-side source contact coupled to the source region, a poly gate formed in a trench in the epitaxy layer, and a front-side drain contact extending through the poly gate trench and isolated from the poly gate. The device may define a drift region from the poly gate/source region intersection to the front-side drain contact. The drift region may be located within the epitaxy layer, without extends into an underlying bulk substrate or transition layer. The depth of the front-side drain contact may be selected to influence the breakdown voltage of the respective device. In addition, the front-side drain contacts may allow the IC structure to be flip-chip mounted or packaged.Type: ApplicationFiled: November 21, 2017Publication date: May 24, 2018Applicant: Microchip Technology IncorporatedInventors: Greg Dix, Jina Shumate, Eric Peterson, Rajesh Nayak
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Patent number: 7518185Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: GrantFiled: January 30, 2007Date of Patent: April 14, 2009Assignee: Semiconductor Components Industries, L.L.C.Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
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Publication number: 20080006874Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: ApplicationFiled: January 30, 2007Publication date: January 10, 2008Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
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Patent number: 7205605Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: GrantFiled: May 10, 2004Date of Patent: April 17, 2007Assignee: Semiconductor Components Industries, L.L.C.Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
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Publication number: 20040207008Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
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Patent number: 6756273Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: GrantFiled: March 12, 2001Date of Patent: June 29, 2004Assignee: Semiconductor Components Industries, L.L.C.Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
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Publication number: 20020127831Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.Type: ApplicationFiled: March 12, 2001Publication date: September 12, 2002Applicant: Semiconductor Components Industries, LLCInventors: Peyman Hadizad, Jina Shumate, Ali Salih