Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A narrow-linewidth tunable external cavity laser includes, sequentially arranged along an optical path, a laser gain chip, a collimating lens, a bandpass filter, a tunable filter, and an output cavity surface. The laser gain chip includes a first end surface and a second end surface positioned along the optical path. The first end surface is further away from the collimating lens and is coated with a highly reflective film to form an external cavity with the output cavity surface.

Abstract: A tunable laser includes a housing having a sealable accommodating cavity, an optical interface and an electrical interface disposed on the housing, a tunable semiconductor laser apparatus, a splitter component, and a photodetector. The tunable semiconductor laser apparatus is disposed in the accommodating cavity for emitting an optical signal whose wavelength is tunable. An electrical signal inputted through the electrical interface controls the tunable semiconductor laser apparatus to emit the optical signal. The optical signal is outputted through the optical interface. The splitter component and the photodetector are disposed outside the housing. The optical signal is split into at least two beams of light by the splitter component after the optical signal is outputted through the optical interface. The photodetector is configured to receive one of the beams of light to monitor the optical signal emitted by the tunable semiconductor laser apparatus.

Abstract: A narrow-linewidth tunable external cavity laser includes, sequentially arranged along an optical path, a laser gain chip, a collimating lens, a bandpass filter, a tunable filter, and an output cavity surface. The laser gain chip includes a first end surface and a second end surface positioned along the optical path. The first end surface is further away from the collimating lens and is coated with a highly reflective film to form an external cavity with the output cavity surface.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.