Abstract: A system for uncertainty prediction is provided. The system includes at least one target system including at least one target device and configured to generate data corresponding to a plurality of parameters of the target device. The system further includes a computing device including a processor configured to receive, during a training phase, first data obtained from the at least one target system, perform a Monte Carlo simulation to generate a first plurality of uncertainty intervals based on the first data, and generate a machine learning model by training using the first plurality of uncertainty intervals and the first data. The processor is further configured to receive, during a prediction phase, second data from the at least one target system and generate, using the machine learning model, a second plurality of uncertainty intervals based on the second data.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.

Abstract: Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.

Abstract: Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a first semiconductor layer, a second semiconductor layer, and an interlayer disposed between the first semiconductor layer and the second semiconductor layer, wherein the inter layer includes gadolinium. Methods of making photovoltaic devices are also presented.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes: (i) a compound including magnesium and a metal species, wherein the metal species includes tin, indium, titanium, or combinations thereof; or (ii) a metal alloy including magnesium; or (iii) a compound comprising magnesium and fluorine; or (iv) combinations thereof. Method of making a photovoltaic device is also presented.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing a capping layer on a transparent conductive oxide layer, wherein the capping layer includes elemental magnesium, a magnesium alloy, a binary magnesium oxide, or combinations thereof. The method further includes disposing a window layer on the capping layer; and forming an interlayer between the transparent conductive oxide layer and the window layer, wherein the interlayer includes magnesium.

Abstract: A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.

Abstract: A method for updating a mobile phone television service guide, a mobile phone television platform and a terminal are disclosed. The method for updating a mobile phone television service guide includes: a mobile phone television platform acquiring synchronous service guide information from an Electronic Service Guide (ESG), the service guide information including channel information and program information; the mobile phone television platform dividing the service guide information into different types of fragments according to a data model of the service guide information, and updating the service guide information based on the different types of fragments; and the mobile phone television platform issuing updated service guide information to a terminal.

Abstract: Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof.

Abstract: A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 Torr. The semiconductor assembly includes a semiconductor layer disposed on a support, and the semiconductor layer includes cadmium and sulfur.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A photovoltaic device is presented. The device includes an intermediate layer disposed between an absorber layer and a back contact layer. The intermediate layer includes a metal or metalloid of Group 15 and oxygen. Method for making a photovoltaic device is also presented.

Abstract: Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.