Abstract: A system and method are provided to detect the operational state of a medical device, which includes a controller, a drive member, and a drive control member, where the controller is configured to control the drive control member to drive the drive member to operate. The method includes: acquiring an operating state parameter of the drive member, and determining the state information of the medical device according to the operating state parameter of the drive member and a predetermined judgment rule. Therefore, the state information of the medical device can be determined, and state monitoring of the medical device is realized, thereby ensuring the reliability of the medical devices.

Abstract: The present application relates to a pressure sensing device and a pressure sensing apparatus. The pressure sensing device (20) includes: one or more pressure sensing sheet (10), and a first substrate (22) configured for carrying the pressure sensing sheet (10); the pressure sensing sheet (10) is connected with the first substrate (22) by welding, and welding points are configured for transmitting a deformation and transmitting an electrical signal, and the pressure sensing sheet includes at least one semiconductor film (12), and a signal measurement circuit is integrated in the at least one semiconductor film (12), and the signal measurement circuit is configured for detecting an amount of the deformation and outputting the electrical signal that is able to be identified.

Abstract: A pressure-sensitive structure and an electronic device are provided in the present application, in the structure of the pressure-sensitive structure, a first elastic carrier is arranged on a first mounting surface of the substrate, a semiconductor film is arranged on the first elastic carrier. When the substrate is deformed, the first elastic carrier is bent and deformed with a deformation of the substrate, a strain signal is amplified by the substrate, so that the semiconductor film can detect an amount of bending deformation of the substrate, and a signal measurement circuit of the semiconductor film is configured to output a recognizable electric signal. The pressure-sensitive structure is a sensor structure being small in size, being high in precision, and being high in reliability and sensitivity. The pressure-sensitive structure is attached to a panel or a side frame of the electronic device.

Abstract: The present application relates to a pressure sensing device and a pressure sensing apparatus. The pressure sensing device (20) includes: one or more pressure sensing sheet (10), and a first substrate (22) configured for carrying the pressure sensing sheet (10); the pressure sensing sheet (10) is connected with the first substrate (22) by welding, and welding points are configured for transmitting a deformation and transmitting an electrical signal, and the pressure sensing sheet includes at least one semiconductor film (12), and a signal measurement circuit is integrated in the at least one semiconductor film (12), and the signal measurement circuit is configured for detecting an amount of the deformation and outputting the electrical signal that is able to be identified.

Abstract: The present application discloses a strain sensing film, a pressure sensor, and a strain sensing system; the strain sensing film includes a semiconductor film, and by arranging a temperature sensor in the semiconductor film, the sensitivity of the strain sensing film is adjusted according to an effective gauge factor obtained from a calibration test and a correlation table reflecting a correlation between an effective gauge factor and a temperature, a better effective gauge factor compensation is achieved, a high sensitivity of the strain gauge of the semiconductor film can be fully utilized. The strain sensing film can be widely used in application scenarios that need to measure local strain or strain variation, force or force variation, pressure or pressure change, displacement, deformation, bending, or bending deformation.

Abstract: A method for fabricating a strain sensing film, a strain sensing film, and a pressure sensor are provided in the present application. A semiconductor wafer is firstly thinned to form a semiconductor film. A die attach film is attached onto the semiconductor film. A resulting semiconductor film is diced to form a plurality of independent strain films. The plurality of independent strain films are transferred to a substrate, and the plurality of independent strain films are completely attached to the substrate. A metal pad of each of the plurality of independent strain films is electrically connected with a corresponding metal pad of the substrate. The plurality of independent strain films are packaged. In this way, the package process of the strain sensing film is completed, which tackles the problem that the existing COB packaging has defects when being applied to package the sensor film.

Abstract: The present application provides a strain sensing film, a pressure sensor, and a hybrid strain sensing system. The strain sensing film includes a semiconductor thin-film, at least two resistors are disposed on the semiconductor thin-film, one resistor has a different response to a strain with respect to at least another resistor, thereby enhancing resistance to external environmental disturbances and improving the accuracy of pressure measurements.

Abstract: The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: B2O3: 25%-45%, SiO2: 25%-45%, MCO3: 1%-10%, Al2O3: 1%-10%, ZnO: 1%-5%, Cs2CO3: 1%-10%, PbCl2: 1%-10%, NaCl: 1%-10%, MnCl2: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

Abstract: The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: B2O3: 25%-45%, SiO2: 25%-45%, MCO3: 1%-10%, Al2O3: 1%-10%, ZnO: 1%-5%, Cs2CO3: 1%-10%, PbCl2: 1%-10%, NaCl: 1%-10%, MnCl2: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

Abstract: The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1?x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSb2O3-bB2O3-cZnO-dM2O, a, b, c, d being molar percentages, a+b+c+d=100%, M among M2O represents an alkali metal, and M2O is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Ce3+ fluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W. A white light semiconductor light source is prepared by the product glass ceramic in combination with the high-power blue light semiconductor light source.

Abstract: The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1?x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSb2O3-bB2O3-cZnO-dM2O, a, b, c, d being molar percentages, a+b+c+d=100%, M among M2O represents an alkali metal, and M2O is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Ce3+ fluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W.