Abstract: The present invention discloses an application of a medical cell CMU-pb-7 in preparation of blood lipid-lowering drugs, which belongs to the technical field of biology. The medical cell CMU-pb-7 disclosed by the present invention is a newly discovered strain of Lactobacillus rhamnosus, having a collection number of CCTCC NO: M 2022220. The medical cell CMU-pb-7 of the present invention can relieve impaired glucose tolerance caused by a high-fat diet in mice with hyperlipidemia, reduce the blood lipid level, enhance the antioxidant capacity of the liver tissue, and regulate the expression of key proteins of liver lipid metabolism to relieve fatty change caused by a high-fat diet. The medical cell CMU-pb-7 disclosed by the present invention has a great potential application prospect in preparation of blood lipid-lowering drugs.

Abstract: The present disclosure provides a chassis assembly and a vehicle. The chassis component includes: a chassis provided with a plurality of mounting positions and configured to install a battery module; a quick-release device through which the battery module is installed on the mounting positions, wherein the quick-release device is controlled by a control system; and a voltage electrical connecting assembly electrically connected to the battery module, wherein the voltage electrical connecting assembly is controlled by the control system. The vehicle includes the chassis assembly.

Abstract: A composition containing recombinant collagen with repairing and soothing effects, eye cream containing the composition and preparation method thereof are provided. The composition contains the following raw materials in parts by weight: 1 to 10 parts of recombinant collagen, 1 to 10 parts of sodium hyaluronate, 1 to 5 parts of bifida ferment lysate, 1 to 15 parts of glucosylglycerol, 1 to 10 parts of bisabolol, 1 to 15 parts eight-treasure essence stock solution, and 1 to 15 parts of pink red plum rechecking essence. The composition features with good skin permeability, contributing to its significant effects on repairing skin barriers and relieving skin inflammation, as well as its advantages of low irritation and high safety. Thus, the composition is suitable for people with damaged eye skin and has good market application prospects.

Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display panel and device. The thin film transistor includes: a gate (11) and an active layer (12) that are located on one side of a base substrate (10); a gate insulation layer (13) located between the gate (11) and the active layer (12); and a source (14) and a drain (15) that are spaced apart and both are in contact with the active layer (12), wherein a first ratio of the thickness of the gate insulation layer (13) and the thickness of the active layer (12) ranges from 3 to 4.

Abstract: A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of <100>.

Abstract: A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Abstract: A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

Abstract: The invention relates to a block bidding method and system for promoting clean energy consumption based on the power trading platform. The block bidding method includes the following steps: dividing the time slots for clean energy units to participate in power trading; predicting the typical monthly power generation curve of clean energy units; decomposing the signed annual power contract of clean energy units into months; determining the monthly trading declaration curve of clean energy units; determining the monthly trading declaration curve of clean energy units; determining the time-slot declaration price of clean energy units; realizing the trading clearing by the power trading platform in accordance with the principle of “high-low matching”.

Abstract: A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Abstract: A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Abstract: The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.

Abstract: The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.

Abstract: A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.

Abstract: A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.

Abstract: A method is provided for reducing particle contamination in an ion implantation system, wherein an ion implantation system having source, mass analyzer, resolving aperture, decel suppression plate, and end station is provided. An ion beam is formed via the ion source, and a workpiece is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.

Abstract: A method is provided for reducing particle contamination in an ion implantation system, wherein an ion implantation system having source, mass analyzer, resolving aperture, decel suppression plate, and end station is provided. An ion beam is formed via the ion source, and a workpiece is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.