Abstract: A system for supplying liquefied hydrogen includes: liquefied hydrogen storage tanks each comprising a temperature control unit controlling an internal temperature of the liquefied hydrogen storage tank to maintain an inside of the liquefied hydrogen storage tank at a low pressure; pressure tanks receiving and storing liquefied hydrogen to be supplied to a liquefied hydrogen demand site from the liquefied hydrogen storage tanks, the pressure tanks having a smaller capacity than the liquefied hydrogen storage tanks and maintained at a higher pressure than the liquefied hydrogen storage tanks; a liquefied hydrogen supply line through which liquefied hydrogen is transferred from the pressure tanks to the liquefied hydrogen demand site; and a compressor compressing boil-off hydrogen gas generated in the liquefied hydrogen storage tanks and supplying the compressed boil-off hydrogen gas to the pressure tanks to generate a pressure required for delivery.

Abstract: A core body temperature measurement device includes a body and an operation unit. The body is fixed to an ear canal of user. The operation unit is combined with a front side of the body, and is configured to be exposed to the ear canal or to be concealed inside, and has a sensor part. the sensor part measures a core body temperature of user when the operation unit is exposed to the ear canal.

Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: Disclosed herein are a Schottky barrier diode (SBD) and a method of manufacturing the same. The SBD includes a substrate, an ohmic layer formed on a portion of an upper portion of the substrate, a Schottky layer formed on a portion of an upper portion of the ohmic layer, an insulating layer formed on a portion of the upper portion of the ohmic layer, a low-k material layer formed on a portion of the upper portion of the substrate, and a Schottky metal layer formed on portions of upper portions of the low-k material layer and the insulating layer.

Abstract: A method of calculating a collision risk of a ship according to an embodiment of the present disclosure may include: calculating an available velocity area based on maneuvering performance of a host ship; calculating a velocity obstacle area where there is a possibility of collision between an object and the host ship; and calculating a collision risk based on at least one of the available velocity area, the velocity obstacle area, and a preset weight.

Abstract: A heating panel includes a lower panel mounted on the floor and an upper panel serving as a cover of the lower panel. The lower panel includes: a plurality of first guides protruding upward from the bottom surface to guide installation of a heating hose; and a first air passage formed as a groove on the bottom surface and the surface of the first guide, and further includes a plurality of second guides protruding upward from the bottom surface, having the first air passage on the surface thereof, and disposed between the plurality of first guides to guide installation of the heating hose. The upper panel is coupled to the lower panel and includes: a second air passage formed on the bottom surface in a groove form; and a second fastening member coupled with the first fastening member.

Abstract: A heating panel includes a lower panel mounted on the floor and an upper panel serving as a cover of the lower panel. The lower panel includes: a plurality of first guides protruding upward from the bottom surface to guide installation of a heating hose; and a first air passage formed as a groove on the bottom surface and the surface of the first guide, and further includes a plurality of second guides protruding upward from the bottom surface, having the first air passage on the surface thereof, and disposed between the plurality of first guides to guide installation of the heating hose. The upper panel is coupled to the lower panel and includes: a second air passage formed on the bottom surface in a groove form; and a second fastening member coupled with the first fastening member.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A semiconductor package includes a package substrate, the package substrate including a conductive plate, an insulating plate on the conductive plate, the insulating plate including a mounting region and a peripheral region surrounding the mounting region, and at least one capillary channel in the peripheral region, a semiconductor chip on the mounting region of the insulating plate, and a molding member on the insulating plate to cover the semiconductor chip, a portion of the molding member being in the at least one capillary channel.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A semiconductor package includes a package substrate, the package substrate including a conductive plate, an insulating plate on the conductive plate, the insulating plate including a mounting region and a peripheral region surrounding the mounting region, and at least one capillary channel in the peripheral region, a semiconductor chip on the mounting region of the insulating plate, and a molding member on the insulating plate to cover the semiconductor chip, a portion of the molding member being in the at least one capillary channel.

Abstract: The disclosure is related to an audio/video processing apparatus for a car such as a car audio system, which allows various applications installed at a mobile communication device of a user (for example, a smart phone, a tablet PC or the like) to be implemented using car equipment, by executing or implementing various applications installed at a mobile communication device through a car audio/video control module or an application for a car (App-C) installed at the car.

Abstract: The disclosure is related to an audio/video processing apparatus for a car such as a car audio system, which allows various applications installed at a mobile communication device of a user (for example, a smart phone, a tablet PC or the like) to be implemented using car equipment, by executing or implementing various applications installed at a mobile communication device through a car audio/video control module or an application for a car (App-C) installed at the car.

Abstract: A semiconductor device includes a semiconductor substrate with a cell region, a second pad region, and a first pad region between the second pad region and the cell region, a first buried gate buried in a trench of the semiconductor substrate, and extended from the cell region to the second pad region, and a second buried gate buried in the trench of the semiconductor substrate, disposed over and spaced apart from an upper part of the first buried gate, and extended from the cell region to the first pad region.

Abstract: A semiconductor device includes a semiconductor substrate with a cell region, a second pad region, and a first pad region between the second pad region and the cell region, a first buried gate buried in a trench of the semiconductor substrate, and extended from the cell region to the second pad region, and a second buried gate buried in the trench of the semiconductor substrate, disposed over and spaced apart from an upper part of the first buried gate, and extended from the cell region to the first pad region.