Patents by Inventor Jin Chul Park
Jin Chul Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162275Abstract: A display device includes a plurality of pixel electrodes on a substrate, light-emitting elements on the plurality of pixel electrodes and extending in a thickness direction of the substrate and connecting electrodes between the plurality of pixel electrodes and the light-emitting elements, wherein a width of the connecting electrodes is greater than a width of the light-emitting elements, and upper corners of each of the light-emitting elements and upper corners of each of the connecting electrodes are rounded.Type: ApplicationFiled: September 26, 2023Publication date: May 16, 2024Inventors: Soo Chul KIM, Tae Gyun KIM, Sung Won CHO, Jin Taek PARK, Jae Ho CHOI
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Publication number: 20240155793Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.Type: ApplicationFiled: January 19, 2024Publication date: May 9, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun Yong CHOI, Young Chul KIM, Ji Su KIM, Hun Sung KIM, Sung Yong PARK, Jin Soo SHIN, Dae Sik YOON, Yong Yeon HWANG
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Patent number: 11974115Abstract: An active sound design (ASD) tuning device and a method thereof may include an ASD device that generates a virtual engine sound for each vehicle situation and a control device that outputs a composite sound by correcting and synthesizing the virtual engine sound and an internal sound measured for each vehicle situation based on a binaural vehicle impulse response (BVIR).Type: GrantFiled: September 8, 2021Date of Patent: April 30, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Ki Chang Kim, Dong Chul Park, Eun Soo Jo, Jin Sung Lee
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Publication number: 20240133614Abstract: A refrigerator door includes a color module which displays various colors by using LEDs. Accordingly, when a consumer desires to change the color of the refrigerator door, the color of the refrigerator door can be changed to color desired by the consumer.Type: ApplicationFiled: February 23, 2022Publication date: April 25, 2024Inventors: Sang Chul HAN, Jin Woo PARK, Jaeyoon OH
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Patent number: 11952652Abstract: Provided is a method of manufacturing a zinc-plated steel sheet. The method includes: coating a metal on the steel sheet on a steel sheet; annealing the metal coated steel sheet; and zinc plating the annealed steel sheet by dipping in a molten zinc plating bath. Further provided is a method of manufacturing a hot-press part including: coating a metal on the steel sheet on a steel sheet; annealing the metal coated steel sheet; zinc plating the annealed steel sheet by dipping in a molten zinc plating bath; heating the zinc-plated steel sheet; and press forming the heated steel sheet.Type: GrantFiled: March 7, 2018Date of Patent: April 9, 2024Assignee: POSCO CO., LTDInventors: Il-Ryoung Sohn, Jong-Sang Kim, Joong-Chul Park, Yeol-Rae Cho, Jin-Keun Oh, Han-Gu Cho, Bong-Hoon Chung, Jong-Seog Lee
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Patent number: 11944998Abstract: A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.Type: GrantFiled: March 18, 2020Date of Patent: April 2, 2024Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byung Chul Lee, Dong-Hyun Kang, Jin soo Park, Tae Song Kim
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Publication number: 20240107032Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.Type: ApplicationFiled: December 7, 2023Publication date: March 28, 2024Applicants: Electronics and Telecommunications Research Institute, Kwangwoon University Industry-Academic Collaboration Foundation, University-Industry Cooperation Group of Kyung Hee UniversityInventors: Hae Chul CHOI, Se Yoon JEONG, Sung-Chang LIM, Jin Soo CHOI, Jin Woo HONG, Dong Gyu SIM, Seoung-Jun OH, Chang-Beom AHN, Gwang Hoon PARK, Seung Ryong KOOK, Sea-Nae PARK, Kwang-Su JEONG
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Publication number: 20240101011Abstract: The present disclosure relates to a gap prevention structure of a seat rail for a vehicle. The gap prevention structure includes: a lower rail configured to be fixed to a bottom of a vehicle body and to have a receiving space formed therein; an upper rail configured to have at least a portion thereof received in the receiving space and to slide in a longitudinal direction of the lower rail; a rolling bearing configured to be rotatably coupled to the upper rail and to roll and move in the receiving space in the longitudinal direction of the lower rail; and a gap prevention unit configured to limit rotation of the rolling bearing by pressing the rolling bearing while being inserted between the lower rail and the rolling bearing.Type: ApplicationFiled: September 19, 2023Publication date: March 28, 2024Inventors: Jin Gu Park, Jae Chul Jung, Hyun Gyu Jo
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Publication number: 20240097297Abstract: A cylindrical secondary battery includes: an electrode assembly including a first electrode plate and a second electrode plate; a cylindrical case having a disk-shaped top portion and a side portion extending from the top portion, the cylindrical case accommodating the electrode assembly; a cathode terminal extending through the top portion and insulated therefrom; a first current collector plate electrically connected to the first electrode plate and the cathode terminal; a second current collector plate electrically connected to the second electrode plate and the side portion of the cylindrical case; a cap plate coupled to the side portion and insulated therefrom; and an insulation tape between the top portion of the cylindrical case and the first current collector plate and covering the first current collector plate.Type: ApplicationFiled: August 16, 2023Publication date: March 21, 2024Inventors: Hyun Ki JUNG, Myung Seob KIM, Kyung Rok LEE, Jin Young MOON, Ho Jae LEE, Byung Chul PARK
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Publication number: 20240097251Abstract: An embodiment of the present invention relates to a cylindrical secondary battery in which a positive electrode terminal is adhered and fixed to a cylindrical can by an insulating sheet, and thus sealing between the cylindrical can and the positive electrode terminal can be facilitated due to an increased contact area.Type: ApplicationFiled: March 29, 2022Publication date: March 21, 2024Inventors: Hyun Ki JUNG, Byung Chul PARK, Gun Gue PARK, Gwan Hyeon YU, Jin Young MOON, Kyung Rok LEE, Myung Seob KIM, Sung Gwi KO, Woo Hyuk CHOI
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Patent number: 11932618Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.Type: GrantFiled: March 13, 2023Date of Patent: March 19, 2024Assignee: ILDONG PHARMACEUTICAL CO., LTD.Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
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Patent number: 11924988Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.Type: GrantFiled: December 23, 2022Date of Patent: March 5, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Yong Choi, Young Chul Kim, Ji Su Kim, Hun Sung Kim, Sung Yong Park, Jin Soo Shin, Dae Sik Yoon, Yong Yeon Hwang
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Patent number: 11703232Abstract: A heating panel includes a lower panel mounted on the floor and an upper panel serving as a cover of the lower panel. The lower panel includes: a plurality of first guides protruding upward from the bottom surface to guide installation of a heating hose; and a first air passage formed as a groove on the bottom surface and the surface of the first guide, and further includes a plurality of second guides protruding upward from the bottom surface, having the first air passage on the surface thereof, and disposed between the plurality of first guides to guide installation of the heating hose. The upper panel is coupled to the lower panel and includes: a second air passage formed on the bottom surface in a groove form; and a second fastening member coupled with the first fastening member.Type: GrantFiled: May 25, 2022Date of Patent: July 18, 2023Assignee: HOYAHOMETECH CO., LTDInventors: Soo-hwan Kwak, Jin-chul Park, Hae-sung Hwang
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Publication number: 20220357052Abstract: A heating panel includes a lower panel mounted on the floor and an upper panel serving as a cover of the lower panel. The lower panel includes: a plurality of first guides protruding upward from the bottom surface to guide installation of a heating hose; and a first air passage formed as a groove on the bottom surface and the surface of the first guide, and further includes a plurality of second guides protruding upward from the bottom surface, having the first air passage on the surface thereof, and disposed between the plurality of first guides to guide installation of the heating hose. The upper panel is coupled to the lower panel and includes: a second air passage formed on the bottom surface in a groove form; and a second fastening member coupled with the first fastening member.Type: ApplicationFiled: May 25, 2022Publication date: November 10, 2022Inventors: Soo-hwan KWAK, Jin-chul PARK, Hae-sung HWANG
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Patent number: 10910224Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.Type: GrantFiled: September 14, 2020Date of Patent: February 2, 2021Assignee: SK hynix Inc.Inventors: Tae-Su Jang, Jin-Chul Park, Ji-Hwan Park, Il-Sik Jang, Seong-Wan Ryu, Se-In Kwon, Jung-Ho Shin, Dae-Jin Ham
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Publication number: 20200411323Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.Type: ApplicationFiled: September 14, 2020Publication date: December 31, 2020Inventors: Tae-Su JANG, Jin-Chul PARK, Ji-Hwan PARK, Il-Sik JANG, Seong-Wan RYU, Se-In KWON, Jung-Ho SHIN, Dae-Jin HAM
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Patent number: 10811260Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.Type: GrantFiled: April 12, 2019Date of Patent: October 20, 2020Assignee: SK hynix Inc.Inventors: Tae-Su Jang, Jin-Chul Park, Ji-Hwan Park, Il-Sik Jang, Seong-Wan Ryu, Se-In Kwon, Jung-Ho Shin, Dae-Jin Ham
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Publication number: 20190244820Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.Type: ApplicationFiled: April 12, 2019Publication date: August 8, 2019Inventors: Tae-Su JANG, Jin-Chul PARK, Ji-Hwan PARK, Il-Sik JANG, Seong-Wan RYU, Se-In KWON, Jung-Ho SHIN, Dae-Jin HAM
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Patent number: 10347576Abstract: A semiconductor package includes a package substrate, the package substrate including a conductive plate, an insulating plate on the conductive plate, the insulating plate including a mounting region and a peripheral region surrounding the mounting region, and at least one capillary channel in the peripheral region, a semiconductor chip on the mounting region of the insulating plate, and a molding member on the insulating plate to cover the semiconductor chip, a portion of the molding member being in the at least one capillary channel.Type: GrantFiled: September 20, 2017Date of Patent: July 9, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwang-Won Choi, Sang-Woo Pae, Seong-Won Jeong, Min-Jae Kwon, Da-Hye Min, Jin-Chul Park, Jae-Won Chang
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Patent number: 10304684Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.Type: GrantFiled: September 25, 2017Date of Patent: May 28, 2019Assignee: SK hynix Inc.Inventors: Tae-Su Jang, Jin-Chul Park, Ji-Hwan Park, Il-Sik Jang, Seong-Wan Ryu, Se-In Kwon, Jung-Ho Shin, Dae-Jin Ham