Abstract: A device for focusing reflected light from a trough reflector onto a focal point in a longitudinal direction is disclosed. The device includes a focusing device disposed on a focal line of the trough reflector, the focusing device forming a longitudinal focal point with high light intensity in overlapping relationship to a transverse focus point provided by the trough reflector.

Abstract: An aligned multiple flat mirror reflector array for concentrating sunlight onto a solar cell is disclosed. The reflector array includes a concentrating dish and a plurality of flat mirrors disposed on an inside surface of the concentrating dish, the plurality of flat mirrors being disposed and aligned on the inside surface of the concentrating dish such that sunlight impinging upon each of the plurality of flat mirrors is reflected upon the solar cell.

Abstract: A system for simultaneously turning and tilting an array of mirror concentrators includes a first stepper motor operable to drive a first lead screw coupled to each row of the array of mirror concentrators, the rotation of the first lead screw simultaneously turning the rows of the array about a first axis thereof, and a second stepper motor operable to drive a second lead screw coupled to each mirror concentrator of each row, the rotation of the second lead screw simultaneously tilting each mirror concentrator about a second axis thereof.

Abstract: A system and method are provided for detecting and quantifying an analyte in vivo. Anti-Stokes Raman scattered radiation emitted from a sample under incident radiation excitation is collected and analyzed. The intensity response is corrected for temperature effects using a Boltzmann correction factor based on the temperature of the sample. The sampled tissue is advantageously the sterile matrix beneath the nail of either a toe or a finger. The incident excitation radiation is projected onto the sterile matrix through the nail, which operates as a window. The present invention may be applied in both the blue/UV and the red/IR regions of the spectrum.

Abstract: A tunable laser and laser tuning method based on the use of a tunable etalon in reflection as a mirror within a laser cavity. The laser emission wavelength is not necessarily at a wavelength of peak etalon reflectivity. A preferred embodiment makes use of a microelectromechanical etalon to tune an external cavity semiconductor laser.

Abstract: A tunable laser and laser tuning method, based on the interaction of a spectrally dependent beam distortion and a spatial filter within a laser cavity. One embodiment of this laser is an external cavity semiconductor laser in which broad tunability is obtained by the insertion of an acousto-optic tunable filter (AOTF) into the laser cavity such that the intra-cavity laser beam passes through the AOTF in zeroth order.

Abstract: A tunable laser and laser tuning method based on the use of a tunable etalon in reflection as a mirror within a laser cavity and forming an end reflective surface thereof. The laser emission wavelength is not necessarily at a wavelength of peak etalon reflectivity. A preferred embodiment makes use of a microelectromechanical etalon to tune an external cavity semiconductor.

Abstract: A laser tuning mechanism which embodies “spectrally dependent spatial filtering” (SDSF) and contemplates two key elements of the tuning mechanism. The first element of the SDSF tuning mechanism is a spectrally dependent beam distortion (i.e. alteration of the amplitude and/or phase profile of the beam) provided by an SDSF tuning element in a laser cavity. The second element of the SDSF tuning mechanism is an intracavity spatial filter which makes the round trip cavity loss a sensitive function of both beam distortion and cavity alignment. Such a laser can be aligned so that a specific beam distortion, which is provided by the SDSF tuning element at a tunable wavelength, is required to obtain minimum round trip cavity loss, thereby providing tunable laser emission. A preferred embodiment of the SDSF tuning mechanism is an external cavity semiconductor laser having a zeroth order acousto-optic tuning element.

Abstract: A laser tuning mechanism which embodies “spectrally dependent spatial filtering” (SDSF) and contemplates two key elements of the tuning mechanism. The first element of the SDSF tuning mechanism is a spectrally dependent beam distortion (i.e. alteration of the amplitude and/or phase profile of the beam) provided by an SDSF tuning element in a laser cavity. The second element of the SDSF tuning mechanism is an intracavity spatial filter which makes the round trip cavity loss a sensitive function of both beam distortion and cavity alignment. Such a laser can be aligned so that a specific beam distortion, which is provided by the SDSF tuning element at a tunable wavelength, is required to obtain minimum round trip cavity loss, thereby providing tunable laser emission. A preferred embodiment of the SDSF tuning mechanism is an external cavity semiconductor laser having a zeroth order acousto-optic tuning element.

Abstract: A tunable laser and laser tuning method based on the use of a tunable etalon in reflection as a mirror within a laser cavity. The laser emission wavelength is not necessarily at a wavelength of peak etalon reflectivity. A preferred embodiment makes use of a microelectromechanical etalon to tune an external cavity semiconductor laser.

Abstract: A system and method are provided for detecting and quantifying an analyte in vivo. Anti-Stokes Raman scattered radiation emitted from a sample under incident radiation excitation is collected and analyzed. The intensity response is corrected for temperature effects using a Boltzmann correction factor based on the temperature of the sample. The sampled tissue is advantageously the sterile matrix beneath the nail of either a toe or a finger. The incident excitation radiation is projected onto the sterile matrix through the nail, which operates as a window. The present invention may be applied in both the blue/UV and the red/IR regions of the spectrum.

Abstract: A tunable laser and laser tuning method, based on the interaction of a spectrally dependent beam distortion and a spatial filter within a laser cavity. One embodiment of this laser is an external cavity semiconductor laser in which broad tunability is obtained by the insertion of an acousto-optic tunable filter (AOTF) into the laser cavity such that the intra-cavity laser beam passes through the AOTF in zeroth order.

Abstract: Method and systems are provided for in vivo, non-invasive detection of blood analytes. A portion of the sterile matrix located beneath a nail is illuminated by passing radiation from an optical source through the nail into the sterile matrix. Scattered, refracted, or reflected radiation emitted within the sampled volume is collected and analyzed to identify and quantify one or more selected analytes.

Abstract: A system and method of in vivo detection and quantification of one or more analytes. Small particles comprising a surface-active monolayer coating are embedded in the dermis. The surface-active monolayer acts to pre-concentrate the analyte by adsorbing the analyte from bulk solution.

Abstract: A tunable laser and laser tuning method based on the use of a tunable etalon in reflection as a mirror within a laser cavity and forming an end reflective surface thereof. The laser emission wavelength is not necessarily at a wavelength of peak etalon reflectivity. A preferred embodiment makes use of a microelectromechanical etalon to tune an external cavity semiconductor.

Abstract: According to the present invention, laser performance is improved by appropriately matching the spectral periods of various etalons within the laser cavity. A first embodiment of the invention is a discretely tunable external cavity semiconductor laser where a grid fixing etalon is present in the laser cavity, the grid fixing etalon free spectral range (FSR) is a whole number multiple of the laser cavity FSR, and the grid fixing etalon FSR is a whole number multiple of the chip etalon FSR. A second embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR, and a mode suppressing etalon is inserted into the laser cavity such that the mode suppressing etalon FSR is a whole number multiple of the chip etalon FSR. A third embodiment of the invention is a tunable external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR.

Abstract: According to the present invention, laser performance is improved by appropriately matching the spectral periods of various etalons within the laser cavity. A first embodiment of the invention is a discretely tunable external cavity semiconductor laser where a grid fixing etalon is present in the laser cavity, the grid fixing etalon free spectral range (FSR) is a whole number multiple of the laser cavity FSR, and the grid fixing etalon FSR is a whole number multiple of the chip etalon FSR. A second embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR, and a mode suppressing etalon is inserted into the laser cavity such that the mode suppressing etalon FSR is a whole number multiple of the chip etalon FSR. A third embodiment of invention is a tunable external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR.

Abstract: A laser tuning mechanism which embodies “spectrally dependent spatial filtering” (SDSF) and contemplates two key elements of the tuning mechanism. The first element of the SDSF tuning mechanism is a spectrally dependent beam distortion (i.e. alteration of the amplitude and/or phase profile of the beam) provided by an SDSF tuning element in a laser cavity. The second element of the SDSF tuning mechanism is an intracavity spatial filter which makes the round trip cavity loss a sensitive function of both beam distortion and cavity alignment. Such a laser can be aligned so that a specific beam distortion, which is provided by the SDSF tuning element at a tunable wavelength, is required to obtain minimum round trip cavity loss, thereby providing tunable laser emission. A preferred embodiment of the SDSF tuning mechanism is an external cavity semiconductor laser having a zeroth order acousto-optic tuning element.

Abstract: Ring-shaped resonant cavities for spectroscopy allow a reduction in optical feedback to the light source, and provide information on the interaction of both s- and p-polarized light with samples. A laser light source is locked to a single cavity mode. An intracavity acousto-optic modulator may be used to couple light into the cavity. The cavity geometry is particularly useful for Cavity Ring-Down Spectroscopy (CRDS).