Abstract: An electronic circuit includes a clock control unit having a first input for receiving a first clock signal, a second input for receiving a second clock signal, a first clock output, and a second clock output, a first flip-flop having a first data input, a first clock input connected to the first clock output, and a first output, and a second flip-flop having a second data input, a second clock input connected to the second clock output, and a second data input connected to the first output of the first flip-flop. The clock control unit provides the first clock signal to the first clock input of the first flip-flop through the first clock output and the second clock signal to the clock input of the second flip-flop through the second clock output terminal in a sequential order.

Abstract: An electronic circuit includes a clock control unit having a first input for receiving a first clock signal, a second input for receiving a second clock signal, a first clock output, and a second clock output, a first flip-flop having a first data input, a first clock input connected to the first clock output, and a first output, and a second flip-flop having a second data input, a second clock input connected to the second clock output, and a second data input connected to the first output of the first flip-flop. The clock control unit provides the first clock signal to the first clock input of the first flip-flop through the first clock output and the second clock signal to the clock input of the second flip-flop through the second clock output terminal in a sequential order.

Abstract: A method for repairing defective memory cells includes receiving an access command having an access address and an access operation. The access address includes a row address and a column address. The method further includes determining whether the row address and the column address are the same as a pre-recorded row address and column address of a defective memory cell. If the row and column addresses of the access address are the same as the respective row and column addresses of the defective memory cell, the method includes replacing the defective memory cell with a redundant memory cell, and executing the access operation using the redundant memory cell.

Abstract: A method for repairing defective memory cells includes receiving an access command having an access address and an access operation. The access address includes a row address and a column address. The method further includes determining whether the row address and the column address are the same as a pre-recorded row address and column address of a defective memory cell. If the row and column addresses of the access address are the same as the respective row and column addresses of the defective memory cell, the method includes replacing the defective memory cell with a redundant memory cell, and executing the access operation using the redundant memory cell.