Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.

Abstract: A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.

Abstract: The invention relates to a token, to an integrated circuit comprising the token, to a method of randomizing the token and a system for randomizing the token. The token comprises a physical unclonable function and comprising probing means for probing the physical unclonable function. The physical unclonable function comprises a capacitor comprising a dielectric medium being arranged at least partially between the electrodes of the capacitor. The dielectric medium is configured for contributing to a capacitance value of the capacitor and comprises conducting particles substantially randomly dispersed in the dielectric medium. The conducting particles comprise a phase changeable material being changeable between a first structural state having a first conductivity and a second structural state having a second conductivity different from the first conductivity.

Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.

Abstract: The invention relates to a token, to an integrated circuit comprising the token, to a method of randomizing the token and a system for randomizing the token. The token comprises a physical unclonable function and comprising probing means for probing the physical unclonable function. The physical unclonable function comprises a capacitor comprising a dielectric medium being arranged at least partially between the electrodes of the capacitor. The dielectric medium is configured for contributing to a capacitance value of the capacitor and comprises conducting particles substantially randomly dispersed in the dielectric medium. The conducting particles comprise a phase changeable material being changeable between a first structural state having a first conductivity and a second structural state having a second conductivity different from the first conductivity.

Abstract: A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.

Abstract: An integrated device includes a Seebeck device (4) integrated in a substrate (2). A heat-generating device (6) warms up the Seebeck device (4) generating electrical power. The Seebeck device powers a further device which may be a micro-battery (8) likewise integrated in the substrate or a Peltier effect device for cooling another heat-generating device.

Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.