Abstract: The present disclosure provides a multifunctional climbing operation platform and an operation method thereof. The multifunctional climbing operation platform includes a main machine, clamping devices, a bolt retightening device, and an auxiliary sleeve replacement box, wherein the clamping devices each include: a fixed seat; and a pair of claw bars swingably arranged on the fixed seat and each including a rear bar body and a front bar body hinged together, wherein when the pair of claw bars are opened, an inner angle between the rear bar body and the front bar body is greater than 180°, the main machine and the clamping devices can climb along an object to be climbed, the bolt retightening device can replace different sleeves from the auxiliary sleeve replacement box, and can screw a bolt on the object. The present disclosure has the advantages of a large avoidance range and diverse functions.

Abstract: A testing method for a blind spot detection system for an automobile includes: applying an electromagnetic interference signal to the tested automobile through an electromagnetic interference signal application device, meanwhile, simulating a static obstacle or a moving obstacle within a detection range through a testing device, and if the blind spot detection system for the tested automobile is activated, determining that the testing is passed. Repeatable and reproducible testing for the electromagnetic safety of the blind spot detection system may be realized.

Abstract: Disclosed are an OTA test method for a vehicle antenna system, a device and a storage medium. According to the method, the radio frequency performance of a physical layer of a whole vehicle antenna system can be tested, and the problem in the prior art that the test result of parts cannot accurately reflect the performance of the whole vehicle antenna system can be solved.

Abstract: A semiconductor structure manufacturing method includes: providing a substrate, the substrate having a plurality of discrete bit lines, and a capacitor contact hole being provided between adjacent bit lines; forming a fill film, the fill film being provided with a gap region; etching the fill film by using a first etch process to open the gap region, the remaining fill film acting as a first fill layer; sequentially stacking at least two base fill layers on a surface of the first fill layer, the base fill layer farthest from the substrate filling the remaining capacitor contact hole; decreasing a doping concentration of the base fill layer, layer by layer and etching the first fill layer and at least part of the base fill layers by using a second etch.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: A semiconductor structure manufacturing method includes: providing a substrate, the substrate having a plurality of discrete bit lines, and a capacitor contact hole being provided between adjacent bit lines; forming a fill film, the fill film being provided with a gap region; etching the fill film by using a first etch process to open the gap region, the remaining fill film acting as a first fill layer; sequentially stacking at least two base fill layers on a surface of the first fill layer, the base fill layer farthest from the substrate filling the remaining capacitor contact hole; decreasing a doping concentration of the base fill layer, layer by layer and etching the first fill layer and at least part of the base fill layers by using a second etch.

Abstract: A visual recognition system and a method of operation are disclosed. The visual recognition system includes: a distance sensor, configured to detect an object close to the system; and a visual recognition module, configured to compare, when the distance sensor detects the object is close, whether the object matches the preset visual recognition mode. By using a low power distance sensor in a visual recognition system, the system's power consumption can be reduced, thereby prolonging the battery lifetime of the system.