Abstract: The present invention belongs to the technical field of biomedicine, and mainly relates to a miR-7-5p mimic for inhibiting migration and invasion of breast cancer, a screening method and an application thereof. The sequence of the miR-7-5p is shown in SEQ ID NO.1. The present invention has found that the miR-7-5p mimic generates a significant inhibitory effect on breast cancer through targeted inhibition of the molecular mechanism of RYK. In vitro culture system, the miR-7-5p mimic can function to inhibit migration and invasion capabilities of breast cancer. The miR-7-5p mimic can inhibit RYK protein and mRNA levels in breast cancer. In nude mice, the miR-7-5p mimic can also significantly inhibit migration and invasion capabilities of breast cancer. Therefore, the present invention demonstrates that the miR-7-5p mimic can be a small-nucleic-acid drug to significantly inhibit breast cancer metastasis.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: A semiconductor structure manufacturing method includes: providing a substrate, the substrate having a plurality of discrete bit lines, and a capacitor contact hole being provided between adjacent bit lines; forming a fill film, the fill film being provided with a gap region; etching the fill film by using a first etch process to open the gap region, the remaining fill film acting as a first fill layer; sequentially stacking at least two base fill layers on a surface of the first fill layer, the base fill layer farthest from the substrate filling the remaining capacitor contact hole; decreasing a doping concentration of the base fill layer, layer by layer and etching the first fill layer and at least part of the base fill layers by using a second etch.

Abstract: A visual recognition system and a method of operation are disclosed. The visual recognition system includes: a distance sensor, configured to detect an object close to the system; and a visual recognition module, configured to compare, when the distance sensor detects the object is close, whether the object matches the preset visual recognition mode. By using a low power distance sensor in a visual recognition system, the system's power consumption can be reduced, thereby prolonging the battery lifetime of the system.