Patents by Inventor Jin-Feng Zhang

Jin-Feng Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240151323
    Abstract: A vacuum switching valve and a suction system having the same. The vacuum switching valve comprises: a valve body, comprising a first end and a second end, the second end being provided with an air inlet, an air outlet and a through hole; a valve element movably arranged in the valve body; a cylinder, the cylinder being connected to the first end and the valve element, the cylinder drives the valve element to move in the valve body, to close or open the air inlet; a stopper passing through the through hole, the stopper comprising a third end and a fourth end, the third end being connected to the valve element, the fourth end being located on the side of the through hole away from the valve element.
    Type: Application
    Filed: November 19, 2021
    Publication date: May 9, 2024
    Inventors: XUE-YANG LU, JIN-FENG ZHANG, HUO-ZHONG WU, HAO YANG, SHENG-RONG ZHANG, BEN WU, GUANG-KE SUO, XIAO-JIN ZHONG, NIAN LIU
  • Patent number: 7876600
    Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: January 25, 2011
    Assignee: Aicestar Technology (SuZhou) Corporation
    Inventors: Jin-Feng Zhang, Jian-Bin Zheng, Zhao-Yong Zhang, Qi-Shuang Yao
  • Publication number: 20100124098
    Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.
    Type: Application
    Filed: November 17, 2008
    Publication date: May 20, 2010
    Applicant: AICESTAR TECHNOLOGY(SUZHOU) CORPORATION
    Inventors: Jin-Feng Zhang, Jian-Bin Zheng, Zhao-Yong Zhang, Qi-Shuang Yao