Abstract: Teaching material generation methods and systems to generate teaching material for language learning are provided. The system comprises a plurality of social circumstances, a plurality of contextual situations, a user interface and a processing module. The user interface receives a selection corresponding to at least one of the social circumstances, and a selection corresponding to at least one of the contextual situations. The processing module generates teaching material according to the selected social circumstance and the selected contextual situation.

Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.

Abstract: A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.

Abstract: Teaching material generation methods and systems to generate teaching material for language learning are provided. The system comprises a plurality of social circumstances, a plurality of contextual situations, a user interface and a processing module. The user interface receives a selection corresponding to at least one of the social circumstances, and a selection corresponding to at least one of the contextual situations. The processing module generates teaching material according to the selected social circumstance and the selected contextual situation.

Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.

Abstract: An apparatus for cleaning semiconductor wafers includes a tank for containing a liquid and receiving a wafer holder with at least a portion of the wafers immersed in the liquid in the tank. A sonic energy generator imparts sonic energy to the liquid. A wafer-moving mechanism in the tank reciprocates and rotates the semiconductor wafer so that at least a portion of the wafer repeatedly passes through an upper surface of the liquid. The wafer-moving mechanism comprises a camming mechanism rotatably received in the tank and a drive for rotating the camming mechanism about a fixed central longitudinal axis of the camming mechanism to reciprocate and rotate the wafer. The camming mechanism includes a cam body having opposing flats spaced apart on opposite sides of its longitudinal axis and opposing gripping surfaces extending between the flats. The cam body has a cross-section defining a major axis and a minor axis, with the major axis of the cam body cross-section being greater than the minor axis.

Abstract: A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.