Patents by Inventor Jing-Cheng Liao

Jing-Cheng Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240331988
    Abstract: In some embodiments, the present disclosure relates to a semiconductor processing apparatus. The semiconductor processing apparatus includes an electrostatic chuck disposed within an interior cavity of a processing chamber and a lower electrode disposed in the interior cavity below the electrostatic chuck. A first sidewall electrode is adjacent to a sidewall of the processing chamber and is outside of the processing chamber. The first sidewall electrode vertically extends from below a top of the electrostatic chuck to a top of the interior cavity of the processing chamber. A first sidewall voltage generator is electrically coupled to the first sidewall electrode and a power generator is electrically coupled to the lower electrode.
    Type: Application
    Filed: May 28, 2024
    Publication date: October 3, 2024
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Patent number: 12027350
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: July 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Patent number: 11710622
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: July 25, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Publication number: 20200402779
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Application
    Filed: September 3, 2020
    Publication date: December 24, 2020
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Publication number: 20200395200
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Application
    Filed: August 27, 2020
    Publication date: December 17, 2020
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Patent number: 10784091
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: September 22, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng
  • Publication number: 20190103256
    Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.
    Type: Application
    Filed: March 21, 2018
    Publication date: April 4, 2019
    Inventors: Jing-Cheng Liao, Chang-Ming Wu, Lee-Chuan Tseng