Abstract: A method for controlling a resistive random access memory (ReRAM) is proposed. The method calculates a number of a bit value of a data when the data is to be written to the resistive random access memory. Each bit of the data is flipped and the data is written to the ReRAM if the number of the bit value is greater than a half of a length of the data. The data as it original is written to the ReRAM if the number of the bit value is less than a half of the length of the data.

Abstract: A method for controlling a resistive random access memory (ReRAM) is proposed. The method calculates a number of a bit value of a data when the data is to be written to the resistive random access memory. Each bit of the data is flipped and the data is written to the ReRAM if the number of the bit value is greater than a half of a length of the data. The data as it original is written to the ReRAM if the number of the bit value is less than a half of the length of the data.

Abstract: A resistive random access memory (ReRAM) and a method for controlling the ReRAM are proposed. The method detects a temperature of the ReRAM and set a reference resistance of a sense amplifier of the ReRAM according to the temperature. In addition, the method adapts to temperature fluctuation by switching operating mode based on the temperature of the ReRAM to enhance the reliability of the ReRAM. The control method may include a self-adaptive write mechanism, which takes write errors and data retention errors under high temperature into consideration at the same time. The control method may include a self-adaptive error correcting code mechanism, which determines the number of write errors according to Write-and-Verify (WAV) of writing and chooses the ECC algorithm. The control method may include a programmable WAV mechanism, programmably dividing N steps of WAV into two parts, so as to facilitate a memory write speed.