Patents by Inventor Jing Hong Huang
Jing Hong Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240395539Abstract: A spin on composition includes a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker partially crosslinks the carbon backbone polymer at a temperature ranging from 100° C. to 170° C., and the second crosslinker crosslinks the carbon backbone polymer at a temperature ranging from 180° C. to 300° C. The second crosslinker is selected from the group consisting of A-(OH)x, A-(OR?)x, A-(C?C)x, and A-(C?C)x, where A is a monomer, oligomer, or a second polymer having a molecular weight ranging from 100 to 20,000, R? is an alkyloxy group, an alkenyl group, or an alkynyl group, and x ranges from 2 to 1000. The second crosslinker is different from the first crosslinker, and when either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jing Hong HUANG, Ching-Yu CHANG, Wei-Han LAI
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Patent number: 12148610Abstract: A composition, comprising: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker partially crosslinks the carbon backbone polymer at a temperature ranging from 100° C. to 170° C., and the second crosslinker crosslinks the carbon backbone polymer at a temperature ranging from 180° C. to 300° C. The first crosslinker is one or more selected from the group consisting of A-(OR)x, A-(NR)x, where A is a monomer, oligomer, or a second polymer having a molecular weight ranging from 100 to 20,000, R is an alkyl group, cycloalkyl group, cycloalkylepoxy group, or C3-C15 heterocyclic group, OR is an alkyloxy group, cycloalkyloxy group, carbonate group, alkylcarbonate group, alkyl carboxylate group, tosylate group, or mesylate group, NR is an alkylamide group or an alkylamino group, and x ranges from 2 to 1000. The second crosslinker is different from the first crosslinker.Type: GrantFiled: June 29, 2023Date of Patent: November 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jing Hong Huang, Ching-Yu Chang, Wei-Han Lai
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Publication number: 20240369929Abstract: A method of manufacturing a semiconductor device includes the following operations. A protective layer is formed over a substrate, in which the protective layer is formed by a composition including a polymer having a polymer backbone and end groups. The polymer backbone is formed by polymerizing a monomer composition including first monomers, and each of the first monomer independently has an aryl substituted with 1, 2, 3, 4, or 5 hydroxyl groups. The end groups include: or combinations thereof. A is a substituted or unsubstituted hydrocarbon group. B is a hydroxyl group, an alkyl group, or a fluoroalkyl group. A photoresist layer is formed over the protective layer. The photoresist layer is patterned.Type: ApplicationFiled: May 4, 2023Publication date: November 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jing Hong HUANG, Wei-Han LAI, Ching-Yu CHANG
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Publication number: 20240371640Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.Type: ApplicationFiled: July 15, 2024Publication date: November 7, 2024Inventors: Jing-Hong HUANG, Wei-Han LAI, Ching-Yu CHANG
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Patent number: 12074027Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.Type: GrantFiled: September 22, 2021Date of Patent: August 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jing-Hong Huang, Wei-Han Lai, Ching-Yu Chang
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Publication number: 20240249941Abstract: Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over protective layer, and resist layer is patterned.Type: ApplicationFiled: March 6, 2024Publication date: July 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jing Hong HUANG, Wei-Han LAI, Ching-Yu CHANG
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Patent number: 11955336Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.Type: GrantFiled: April 23, 2021Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jing Hong Huang, Wei-Han Lai, Ching-Yu Chang
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Publication number: 20230359124Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.Type: ApplicationFiled: July 14, 2023Publication date: November 9, 2023Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang
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Publication number: 20230343582Abstract: A composition, comprising: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker partially crosslinks the carbon backbone polymer at a temperature ranging from 100° C. to 170° C., and the second crosslinker crosslinks the carbon backbone polymer at a temperature ranging from 180 20 C. to 300° C. The first crosslinker is one or more selected from the group consisting of A-(OR)x, A-(NR)x, where A is a monomer, oligomer, or a second polymer having a molecular weight ranging from 100 to 20,000, R is an alkyl group, cycloalkyl group, cycloalkylepoxy group, or C3-C15 heterocyclic group, OR is an alkyloxy group, cycloalkyloxy group, carbonate group, alkylcarbonate group, alkyl carboxylate group, tosylate group, or mesylate group, NR is an alkylamide group or an alkylamino group, and x ranges from 2 to 1000. The second crosslinker is different from the first crosslinker.Type: ApplicationFiled: June 29, 2023Publication date: October 26, 2023Inventors: Jing Hong HUANG, Ching-Yu CHANG, Wei-Han LAI
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Patent number: 11728161Abstract: A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.Type: GrantFiled: July 13, 2022Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jing Hong Huang, Ching-Yu Chang, Wei-Han Lai
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Patent number: 11703766Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.Type: GrantFiled: July 25, 2022Date of Patent: July 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang
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Publication number: 20220392764Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.Type: ApplicationFiled: September 22, 2021Publication date: December 8, 2022Inventors: Jing-Hong HUANG, Wei-Han LAI, Ching-Yu CHANG
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Publication number: 20220373891Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.Type: ApplicationFiled: July 25, 2022Publication date: November 24, 2022Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang
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Publication number: 20220367178Abstract: A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.Type: ApplicationFiled: July 13, 2022Publication date: November 17, 2022Inventors: Jing Hong HUANG, Ching-Yu CHANG, Wei-Han LAI
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Publication number: 20220359190Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.Type: ApplicationFiled: April 23, 2021Publication date: November 10, 2022Inventors: Jing Hong Huang, Wei-Han Lai, Ching-Yu Chang
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Patent number: 11476108Abstract: A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.Type: GrantFiled: August 3, 2020Date of Patent: October 18, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jing Hong Huang, Ching-Yu Chang, Wei-Han Lai
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Patent number: 11442364Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.Type: GrantFiled: May 16, 2019Date of Patent: September 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang
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Publication number: 20220037150Abstract: A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.Type: ApplicationFiled: August 3, 2020Publication date: February 3, 2022Inventors: Jing Hong HUANG, Ching-Yu CHANG, Wei-Han LAI
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Publication number: 20200006048Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.Type: ApplicationFiled: May 16, 2019Publication date: January 2, 2020Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang