Abstract: A method for forming a bit-line contact plug includes providing a substrate including a transistor which includes a gate structure and a source/drain at both sides of the gate structure; forming a conductive layer, a bit-line contact material layer and a hard mask layer; performing an etching process using the conductive layer as an etching stop layer to etch the bit-line contact material layer and the hard mask layer and forming the bit-line contact plug on the source/drain. A transistor structure includes a gate structure and a source/drain at both sides of the gate structure, a conductive layer covering part of the gate structure and connected to the source/drain, and a bit-line contact plug disposed on the conductive layer and directly connected to the conductive layer.

Abstract: A method for forming a bit-line contact plug includes providing a substrate including a transistor which includes a gate structure and a source/drain at both sides of the gate structure; forming a conductive layer, a bit-line contact material layer and a hard mask layer; performing an etching process using the conductive layer as an etching stop layer to etch the bit-line contact material layer and the hard mask layer and forming the bit-line contact plug on the source/drain. A transistor structure includes a gate structure and a source/drain at both sides of the gate structure, a conductive layer covering part of the gate structure and connected to the source/drain, and a bit-line contact plug disposed on the conductive layer and directly connected to the conductive layer.

Abstract: Disclosed is a seasoning method for an etch chamber for improving the passing rate, comprising the steps of: introducing a wafer or plural control wafers into the etch chamber; introducing reacting gases into the etch chamber; applying power to top and bottom electrodes of the etch chamber to plasmarize the reacting gases; and adjusting the gate valve of the etch chamber to 90 to 100% of the fully open position, thereby reducing the amount of by-products and eliminating the factors for reducing the passing rate. The seasoning method of this invention is based on a low pressure, high flow-rate sluicing mechanism, where the atmospheric flow and high vacuuming ability would remove the maximum amount of polymer particles and flaking from the etch chamber.