Patents by Inventor Jing-Kai HUANG

Jing-Kai HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250063325
    Abstract: An interactive apparatus positioning system includes an interactive apparatus and a server. In response to an interactive apparatus information corresponding to a terminal device information, the server is configured to transmit an encrypted certificate to the interactive apparatus and transmit a key corresponding to the encrypted certificate to the terminal device. In response to the interactive apparatus being in an activated state, the interactive apparatus is configured to transmit the encrypted certificate to the terminal device. The server is configured to receive a location information corresponding to the terminal device from the terminal device to locate the interactive apparatus, wherein the location information is transmitted in response to the terminal device receiving the encrypted certificate and obtaining a decrypted certificate by decrypting the encrypted certificate with the key.
    Type: Application
    Filed: August 14, 2024
    Publication date: February 20, 2025
    Inventors: Tzu-Hsiang LAN, Jing-Kai HUANG
  • Publication number: 20250061478
    Abstract: A virtual reward distribution system includes an interactive apparatus, a return apparatus, and a server. The interactive apparatus is configured to determine whether an input operation matches a reward condition. In response to the input operation matching the reward condition, the interactive apparatus is configured to select a reward certificate corresponding to the reward condition. The server is configured to receive the reward certificate to store the reward certificate into a user account. In response to the interactive apparatus determined as switched to a returned state by the return apparatus, the return apparatus is configured to transmit a rental certificate to the server. The server is configured to unlock the reward certificate in the user account corresponding to the rental certificate based on the rental certificate to distribute a virtual reward corresponding to the reward certificate in the user account to a terminal device.
    Type: Application
    Filed: August 14, 2024
    Publication date: February 20, 2025
    Inventors: Tzu-Hsiang LAN, Jing-Kai HUANG
  • Publication number: 20250061510
    Abstract: An interactive apparatus rental system includes a plurality of interactive apparatuses, a rental apparatus, and a server. The server is configured to receive a renter data, wherein the renter data is generated by the rental apparatus in response to a rental request transmitted from a terminal device. The server is configured to select a first interactive apparatus from the interactive apparatuses to generate a unlock command. In response to receiving the unlock command, the rental apparatus is configured to unlock the first interactive apparatus. The server is configured to authenticate the first interactive apparatus and the terminal device to activate an interactive function of the first interactive apparatus.
    Type: Application
    Filed: August 14, 2024
    Publication date: February 20, 2025
    Inventors: Tzu-Hsiang LAN, Jing-Kai HUANG
  • Publication number: 20250048781
    Abstract: A modulator heater structure may include a plurality of regions having different thicknesses. For example, a heater ring of the modulator heater structure may have a first thickness. A heater pad of the modulator heater structure, that is configured to provide an electrical current to the heater ring, may have a second thickness that is greater than the first thickness. The lesser thickness of the heater ring of the modulator heater structure provides high electrical resistance in the heater ring, which enables the heater ring to quickly and efficiently generate heat. The greater thickness of the heater pad provides low electrical resistance in the second region, which enables the electrical current to be efficiently provided through the heater pad to the heater ring with reduced heat dissipation in the hear pad due to the lower electrical current dissipation in the heater pad.
    Type: Application
    Filed: August 4, 2023
    Publication date: February 6, 2025
    Inventors: Wen-Shun LO, Sheng Kai YEH, Jing-Hwang YANG, Chi-Yuan SHIH, Shih-Fen HUANG, YingKit Felix TSUI
  • Publication number: 20240330208
    Abstract: A method and a system for switching an input device are disclosed. The method is adapted to the system for switching the input device including a main control device and a slave device. The main control device is connected to an input device and detects input information of the input device. The main control device detects a transmission protocol between the main control device and the slave device. Whether a control target device of the input device is the slave device is determined by the main control device. When the control target device of the input device is the slave device, the main control device converts the input information into a transmission packet conforming to the transmission protocol. The transmission packet is transmitted from the main control device to the slave device. The slave device parses the transmission packet to obtain the input information to perform an input operation according to the input information.
    Type: Application
    Filed: November 9, 2023
    Publication date: October 3, 2024
    Applicant: ASUSTeK COMPUTER INC.
    Inventors: Yi-Chi Lai, Li-Yuan Huang, Jing-Kai Huang
  • Patent number: 11329170
    Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: May 10, 2022
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ming-Yang Li, Jing-Kai Huang, Lain-Jong Li
  • Patent number: 10998452
    Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 4, 2021
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ming-Yang Li, Jing-Kai Huang, Lain-Jong Li
  • Publication number: 20210119060
    Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Ming-Yang LI, Jing-Kai HUANG, Lain-Jong LI
  • Publication number: 20200274003
    Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.
    Type: Application
    Filed: September 20, 2018
    Publication date: August 27, 2020
    Inventors: Ming-Yang LI, Jing-Kai HUANG, Lain-Jong LI