Patents by Inventor Jing Kong

Jing Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230249974
    Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
    Type: Application
    Filed: November 3, 2022
    Publication date: August 10, 2023
    Applicants: Massachusetts Institute of Technology, King Fahd University of Petroleum & Minerals
    Inventors: Piran Kidambi, Ahmed Ibrahim, Tahar Laoui, Jing Kong, Rohit N Karnik, Sui Zhang
  • Patent number: 11524898
    Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: December 13, 2022
    Assignees: Massachusetts Institute of Technology, King Fahd University of Petroleum & Minerals
    Inventors: Piran Kidambi, Ahmed Ibrahim, Tahar Laoui, Jing Kong, Rohit N. Karnik, Sui Zhang
  • Publication number: 20210359099
    Abstract: Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.
    Type: Application
    Filed: May 13, 2021
    Publication date: November 18, 2021
    Inventors: Pin-Chun Shen, Jing Kong
  • Patent number: 11060186
    Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: July 13, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Jing Kong, Qingqing Ji, Zhenfei Gao
  • Publication number: 20210187161
    Abstract: The present invention provides a device or medical device comprising a graphene coating. Particularly, the graphene coating features substantially high transmittance, biointegrity and biocompatibility.
    Type: Application
    Filed: April 13, 2017
    Publication date: June 24, 2021
    Applicants: Massachusetts Eye and Ear Infirmary, Massachusetts Institute of Technology
    Inventors: Miguel Gonzalez ANDRADES, Paraskevi Evi KOLOVOU, Mahomed Mehdi GOULAMALY, Jing KONG, Tian MING
  • Patent number: 10988842
    Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: April 27, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian J. Modtland, Jing Kong, Marc A. Baldo, Efren Navarro-Moratalla, Xiang Ji
  • Patent number: 10914637
    Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.
    Type: Grant
    Filed: June 23, 2019
    Date of Patent: February 9, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Yuxuan Lin, Xiang Ji, Tomas Palacios, Jing Kong
  • Publication number: 20200062600
    Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
    Type: Application
    Filed: November 3, 2017
    Publication date: February 27, 2020
    Applicants: Massachusetts Institute of Technology, King Fahd University of Petroleum & Minerals
    Inventors: Piran Kidambi, Ahmed Ibrahim, Tahar Laoui, Jing Kong, Rohit N. Karnik, Sui Zhang
  • Publication number: 20190390950
    Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.
    Type: Application
    Filed: June 23, 2019
    Publication date: December 26, 2019
    Applicant: Massachusetts Institute of Technology
    Inventors: Yuxuan Lin, Xiang Ji, Tomas Palacios, Jing Kong
  • Publication number: 20190338416
    Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.
    Type: Application
    Filed: April 12, 2019
    Publication date: November 7, 2019
    Applicant: Massachusetts Institute of Technology
    Inventors: Jing Kong, Qingqing Ji, Zhenfei Gao
  • Publication number: 20190330735
    Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
    Type: Application
    Filed: April 17, 2018
    Publication date: October 31, 2019
    Applicant: Massachusetts Institute of Technology
    Inventors: Brian J. Modtland, Jing Kong, Marc A. Baldo, Efren Navarro-Moratalla, Xiang Ji
  • Patent number: 10246637
    Abstract: A method for preparing a core-shell nanocrystal can include mixing an M-containing precursor solution, an X-containing precursor solution, and an acid or alcohol in an inert atmosphere at a first temperature to form a reaction mixture; maintaining the reaction mixture at the first temperature to grow the MX core of the nanocrystal; raising the temperature of the reaction mixture to a second temperature; and maintaining the reaction mixture at the second temperature to grow a shell of the nanocrystal.
    Type: Grant
    Filed: May 7, 2016
    Date of Patent: April 2, 2019
    Assignee: Massachusetts Institute of Technology
    Inventors: Zhengtao Deng, Tian Ming, He Dong, Aishuang Xiang, Jing Kong
  • Patent number: 10109752
    Abstract: A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: October 23, 2018
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Hyesung Park, Sehoon Chang, Jing Kong, Silvija Gradecak
  • Patent number: 9833740
    Abstract: A process of removing SO2 from a flue gas with a trickling filter using modified ceramsite packing is described. The biological flue gas desulfurization process includes: feeding the flue gas containing sulfur dioxide through the column bottom into the biomembrane trickling filter at certain temperature, contacting with the modified ceramsite biomembrane packing and purifying, which purified flue gas is discharged via the column top; and spraying the nutrient fluid rich in high concentration of the desulfurization strain through the top to the modified ceramsite biomembrane packing, thereby the sulfur-bearing pollution source in the flue gas is degraded, so as to discharge a purified flue gas satisfying the environmental requirements.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: December 5, 2017
    Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, RESEARCH INSTITUTE OF NANJING CHEMICAL INDUSTRIAL GROUP
    Inventors: Aixiang Hao, Songbai Mao, Jing Kong
  • Publication number: 20170331069
    Abstract: A transfer stamp comprising a nano-film layer is formed on a substantially transparent polymeric substrate, wherein the substantially transparent polymeric substrate comprises an indirect adhesion layer adhered to the nano-film. The nano-film layer of the transfer stamp is applied to a surface of a target substrate; the nano-film layer is positioned between the indirect adhesion layer and the target substrate.
    Type: Application
    Filed: May 12, 2017
    Publication date: November 16, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Yi Song, Jin-Yong Hong, Jing Kong
  • Patent number: 9812525
    Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: November 7, 2017
    Assignee: Massachusetts Institute of Technology
    Inventors: Mildred S. Dresselhaus, Jing Kong, Tomas A. Palacios, Xi Ling, Yuxuan Lin
  • Publication number: 20170217777
    Abstract: A two-dimensional film (such as graphene) is formed on a surface of a growth substrate. A first surface of the two-dimensional film adheres to the growth substrate, and a second surface of the two-dimensional film is then coated with a conforming carrier layer comprising ethylene vinyl acetate. The surface of the growth substrate is etched to release the two-dimensional film with the conforming carrier layer from the growth substrate, wherein the conforming carrier layer maintains the integrity of the two-dimensional film during and after its release from the growth substrate. The first surface of the two-dimensional film with the conforming carrier layer coating is then applied onto a target substrate to form a graphene coating on the target substrate. The conforming carrier layer is then removed from the two-dimensional film by exposing the conforming carrier layer to a solvent while the two-dimensional film is coating the target substrate.
    Type: Application
    Filed: January 30, 2017
    Publication date: August 3, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Jin-Yong Hong, Jing Kong
  • Publication number: 20170170260
    Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.
    Type: Application
    Filed: December 9, 2016
    Publication date: June 15, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Mildred S. Dresselhaus, Jing Kong, Tomas A. Palacios, Xi Ling, Yuxuan Lin
  • Patent number: 9637839
    Abstract: Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: May 2, 2017
    Assignee: Massachusetts Institute of Technology
    Inventors: Jing Kong, Lain-Jong Li, Yi-Hsien Lee
  • Publication number: 20170050856
    Abstract: A re-dispersible, dry graphene powder can be formed by producing a solution of graphene sheets in solvent, adding surfactant to the solution, and then drying the solution to produce dry graphene sheets coated with surfactant.
    Type: Application
    Filed: August 18, 2016
    Publication date: February 23, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Tian Ming, Cheng-Te Lin, Jing Kong