Abstract: A data processing method for a low-power wireless personal area network (WPAN) system and a mirror server are provided. The low-power WPAN system includes an electronic device, and the data processing method includes: receiving sensing data at time intervals, and in response to determining that a last data record of the sensing data of a first time segment is received in a fault-tolerant time segment, triggering a rollover mechanism to move the sensing data stored in a memory block that is indexed as a (k+1)th time segment of kth previous unit time before the first time segment into a memory block that is indexed as a (k+2)th time segment of an (k+1) previous unit time before the first time segment, and move the sensing data stored in the memory block indexed as the first time segment into the memory block indexed as the second time segment.

Abstract: The present invention relates to a method of fabricating a through silicon via (TSV) structure, in which, a dielectric layer is disposed to cover surface of each of a device region of a substrate and a sidewall and a bottom of a via hole in a TSV region of the substrate, and the via hole having the dielectric layer covering the sidewall and the bottom is filled with a conductive material. The present invention also relates to a TSV structure, in which, a dielectric layer disposed in the device region of a substrate extends to the via hole in a TSV region of the substrate to cover surface of the sidewall of the via hole to serve as a dielectric liner, and a conductive material is filled into the via hole having the dielectric layer covering the sidewall.

Abstract: A semiconductor substrate is first provided. The semiconductor substrate includes a material layer and a patterned photoresist layer disposed on the material layer. Subsequently, a contact etching process is performed on the material layer by utilizing the patterned photoresist layer as an etching mask so to form an etched hole in the material layer. Thereafter, a solvent cleaning process is carried out on the semiconductor substrate by utilizing a cleaning solvent. Next, a water cleaning process is performed on the semiconductor substrate by utilizing deionized water. The temperature of the deionized water is in a range from 30° C. to 99° C.