Patents by Inventor Jing-Long XIAO

Jing-Long XIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11449310
    Abstract: A method for generating a random number, applied in a random number generator coupled to a flash memory is disclosed. the method comprises: selecting a plurality of cells from the flash memory; initializing the selecting cells of the flash memory; programming the selecting cells to obtain a plurality of first potential values of the selecting cells; re-initializing the selecting cells of the flash memory; re-programming the selecting cells to obtain a plurality of second potential values of the selecting cells; and processing the first potential values and the second potential values according to a predetermined algorithm to generating the random number.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: September 20, 2022
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Shih-Fu Huang, Cheng-Yu Chen, Yi-Lin Hsieh, Jing-Long Xiao
  • Patent number: 10714187
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: July 14, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Yi-Lin Hsieh, Jing-Long Xiao, Cheng-Yu Chen, Wang-Sheng Lin
  • Patent number: 10705743
    Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: July 7, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Shih-Fu Huang, Cheng-Yu Chen, Yi-Lin Hsieh, Jing-Long Xiao
  • Publication number: 20200081635
    Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.
    Type: Application
    Filed: March 15, 2019
    Publication date: March 12, 2020
    Inventors: Shih-Fu Huang, Cheng-Yu Chen, Yi-Lin Hsieh, Jing-Long Xiao
  • Publication number: 20200081689
    Abstract: A method for generating a random number, applied in a random number generator coupled to a flash memory is disclosed. the method comprises: selecting a plurality of cells from the flash memory; initializing the selecting cells of the flash memory; programming the selecting cells to obtain a plurality of first potential values of the selecting cells; re-initializing the selecting cells of the flash memory; re-programming the selecting cells to obtain a plurality of second potential values of the selecting cells; and processing the first potential values and the second potential values according to a predetermined algorithm to generating the random number.
    Type: Application
    Filed: August 21, 2019
    Publication date: March 12, 2020
    Inventors: Shih-Fu Huang, Cheng-Yu Chen, Yi-Lin Hsieh, Jing-Long Xiao
  • Publication number: 20200075104
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Application
    Filed: November 11, 2019
    Publication date: March 5, 2020
    Inventors: Yi-Lin HSIEH, Jing-Long XIAO, Cheng-Yu CHEN, Wang-Sheng LIN
  • Patent number: 10566065
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: February 18, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Yi-Lin Hsieh, Jing-Long Xiao, Cheng-Yu Chen, Wang-Sheng Lin
  • Publication number: 20190214099
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Application
    Filed: September 20, 2018
    Publication date: July 11, 2019
    Inventors: Yi-Lin HSIEH, Jing-Long XIAO, Cheng-Yu CHEN, Wang-Sheng LIN
  • Publication number: 20180321877
    Abstract: An extending device includes a first interface unit, at least one second interface unit and a control circuit. The first interface unit is coupled to controller, the at least one second interface unit is coupled to at least one memory, and the control circuit is coupled between the first interface unit and the at least one second interface unit. The first interface unit is configured to receive a control command sent by the controller. The control circuit is configured to interpret the control command, and to control the at least one second interface unit to execute a corresponding action according to the control command.
    Type: Application
    Filed: November 14, 2017
    Publication date: November 8, 2018
    Inventors: Cheng-Yu CHEN, Jing-Long XIAO, Yi-Lin HSIEH