Patents by Inventor Jing M. Xu

Jing M. Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12138113
    Abstract: The present invention proposes an apparatus (120) and method for detecting bone fracture of a subject on basis of ultrasound images. The apparatus (120) comprises a first fracture detector (122) and a second fracture detector (124). The first fracture detector (122) is configured to receive a first ultrasound image of a region of the subject, to identify a bone in the first ultrasound image, to identify at least one focus area within the region on basis of the identified bone, to generate focus area information indicating position of the at least one focus area, and to instruct an acquisition of a second ultrasound image of the region acquired based on the generated focus area information. The second fracture detector (124) is configured to receive the second ultrasound image, and to detect bone fracture on the basis of the second ultrasound image.
    Type: Grant
    Filed: November 28, 2019
    Date of Patent: November 12, 2024
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Jing Ping Xu, Balasundar Iyyavu Raju, Anthony M. Gades
  • Patent number: 12053327
    Abstract: Systems, devices, and methods are provided to provide serial monitoring for a patient. An ultrasound system is provided which may include subdividing a portion of the anatomy of a patient into a number of zones. Imaging data may be received by an imaging device. This imaging data may be used to generate a severity score for each zone based on imaging parameters within the imaging data. Changes in the severity score for each zone may be displayed over time, such that a medical professional may monitor each zone in a serial manner.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: August 6, 2024
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Balasundar Iyyavu Raju, Anthony M. Gades, Jing Ping Xu
  • Patent number: 5581091
    Abstract: Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 10.sup.10 per square cm.
    Type: Grant
    Filed: December 1, 1994
    Date of Patent: December 3, 1996
    Inventors: Martin Moskovits, Jing M. Xu