Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: Apparatuses and techniques include a substrate, a controller die mounted on the substrate, fingers electrically connecting the controller die to the substrate, a spacer mounted on the substrate adjacent to the controller die, and a first memory die mounted on the spacer. The first memory die is attached to a top surface of the spacer. The spacer has a curved edge facing the controller. The curved edge may have a first curve including a first curve apex extending away from the controller, a first curve peak on one side of the first curve apex, and a second curve peak on an opposite side of the first curve apex than the first curve peak. Additional fingers connect the controller and the first memory die at a point that is aligned with the space between the first curve and a line extending from the first curve peak and the second curve peak.

Abstract: Apparatuses and techniques include a substrate, a controller die mounted on the substrate, fingers electrically connecting the controller die to the substrate, a spacer mounted on the substrate adjacent to the controller die, and a first memory die mounted on the spacer. The first memory die is attached to a top surface of the spacer. The spacer has a curved edge facing the controller. The curved edge may have a first curve including a first curve apex extending away from the controller, a first curve peak on one side of the first curve apex, and a second curve peak on an opposite side of the first curve apex than the first curve peak. Additional fingers connect the controller and the first memory die at a point that is aligned with the space between the first curve and a line extending from the first curve peak and the second curve peak.