Patents by Inventor Jing Yang Wang
Jing Yang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10967706Abstract: A mechanism is provided for controlling the internal air-quality of a vehicle, including determining a changing trend of the in-vehicle air-quality based on acquired in-vehicle sensor data and usage status of the vehicle and responsive to the determined changing trend of the in-vehicle air-quality, signaling a control system of the vehicle to control the usage status of the vehicle based on a control policy.Type: GrantFiled: September 13, 2019Date of Patent: April 6, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ning Duan, Jing Chang Huang, Peng Ji, Chun Yang Ma, Zhi Hu Wang, Renjie Yao
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Publication number: 20210066579Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.Type: ApplicationFiled: September 30, 2019Publication date: March 4, 2021Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Si-Han Tsai, Che-Wei Chang, Jing-Yin Jhang
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Patent number: 10916694Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: GrantFiled: January 23, 2019Date of Patent: February 9, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20210035620Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.Type: ApplicationFiled: August 29, 2019Publication date: February 4, 2021Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
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Patent number: 10910553Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.Type: GrantFiled: August 5, 2019Date of Patent: February 2, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
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Publication number: 20210028351Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the top electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).Type: ApplicationFiled: October 7, 2020Publication date: January 28, 2021Inventors: Hui-Lin Wang, Chia-Chang Hsu, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang
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Publication number: 20210020828Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.Type: ApplicationFiled: August 5, 2019Publication date: January 21, 2021Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
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Publication number: 20210020691Abstract: A magnetoresistive random access memory (MRAM), including multiple cell array regions, multiple MRAM cells disposed in the cell array region, a silicon nitride liner conformally covering on the MRAM cells, an atomic layer deposition dielectric layer covering on the silicon nitride liner in the cell array region, wherein the surface of atomic layer deposition dielectric layer is a curved surface concave downward to the silicon nitride liner at the boundary of MRAM cells, and an ultra low-k dielectric layer covering on the atomic layer deposition dielectric layer.Type: ApplicationFiled: August 6, 2019Publication date: January 21, 2021Inventors: Hui-Lin Wang, Chen-Yi Weng, Ying-Cheng Liu, Yi-Hui Lee, Chin-Yang Hsieh, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang
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Publication number: 20200373478Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.Type: ApplicationFiled: June 12, 2019Publication date: November 26, 2020Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
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Patent number: 10840432Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the top electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).Type: GrantFiled: November 26, 2018Date of Patent: November 17, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chia-Chang Hsu, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang
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Patent number: 10828959Abstract: A method to train a machine learning model for in-vehicle air quality control in a knowledge-based system, executed by one or more computer processors, includes collecting data related to in-vehicle air quality from a plurality of probe cars where the data is collected by various on-board systems in each probe car. The method includes correlating the data related to in-vehicle air quality from each probe car with air quality measurements from each probe car, where the correlation is used to update the machine learning model. The method includes determining a situation when an in-vehicle air quality measurement of the air quality measurements is above a pre-determined in-vehicle air quality level and determining instructions for actions by one or more of the one or more on-board systems in each of the probe cars to maintain an in-vehicle air quality level at or below the pre-determined in-vehicle air quality level.Type: GrantFiled: September 15, 2017Date of Patent: November 10, 2020Assignee: International Business Machines CorporationInventors: Ning Duan, Peng Gao, Jing Chang Huang, Peng Ji, Chun Yang Ma, Wei Sun, Zhi Hu Wang, Ren Jie Yao
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Publication number: 20200295257Abstract: A manufacturing method of a semiconductor device includes the following steps. A first inter-metal dielectric (IMD) layer is formed on a substrate. A cap layer is formed on the first IMD layer. A connection structure is formed on the substrate and penetrates the cap layer and the first IMD layer. A magnetic tunnel junction (MTJ) stack is formed on the connection structure and the cap layer. A patterning process is performed to the MTJ stack for forming a MTJ structure on the connection structure and removing the cap layer. A second IMD layer is formed on the first IMD layer and surrounds the MTJ structure. The semiconductor device includes the substrate, the connection structure, the first IMD layer, the MTJ structure, and the second IMD layer. The dielectric constant of the first IMD layer is lower than the dielectric constant of the second IMD layer.Type: ApplicationFiled: May 27, 2020Publication date: September 17, 2020Inventors: Chen-Yi Weng, Jing-Yin Jhang, Hui-Lin Wang, Chin-Yang Hsieh
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Publication number: 20200266335Abstract: A semiconductor device preferably includes a metal-oxide semiconductor (MOS) transistor disposed on a substrate, an interlayer dielectric (ILD) layer disposed on the MOS transistor, and a magnetic tunneling junction (MTJ) disposed on the ILD layer. Preferably, a top surface of the MTJ includes a reverse V-shape while the top surface of the MTJ is also electrically connected to a source/drain region of the MOS transistor.Type: ApplicationFiled: March 10, 2019Publication date: August 20, 2020Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
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Patent number: 10727397Abstract: A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.Type: GrantFiled: January 29, 2019Date of Patent: July 28, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Yi-Wei Tseng, Meng-Jun Wang, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang, Yu-Ping Wang, Chien-Ting Lin, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, I-Ming Tseng
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Publication number: 20200227625Abstract: A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.Type: ApplicationFiled: January 29, 2019Publication date: July 16, 2020Inventors: Hui-Lin Wang, Yi-Wei Tseng, Meng-Jun Wang, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang, Yu-Ping Wang, Chien-Ting Lin, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, I-Ming Tseng
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Patent number: 10707412Abstract: A manufacturing method of a semiconductor device includes the following steps. A first inter-metal dielectric (IMD) layer is formed on a substrate. A cap layer is formed on the first IMD layer. A connection structure is formed on the substrate and penetrates the cap layer and the first IMD layer. A magnetic tunnel junction (MTJ) stack is formed on the connection structure and the cap layer. A patterning process is performed to the MTJ stack for forming a MTJ structure on the connection structure and removing the cap layer. A second IMD layer is formed on the first IMD layer and surrounds the MTJ structure. The semiconductor device includes the substrate, the connection structure, the first IMD layer, the MTJ structure, and the second IMD layer. The dielectric constant of the first IMD layer is lower than the dielectric constant of the second IMD layer.Type: GrantFiled: December 4, 2018Date of Patent: July 7, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chen-Yi Weng, Jing-Yin Jhang, Hui-Lin Wang, Chin-Yang Hsieh
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Publication number: 20200212290Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: ApplicationFiled: January 23, 2019Publication date: July 2, 2020Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20200144490Abstract: A manufacturing method of a semiconductor device includes the following steps. A first inter-metal dielectric (IMD) layer is formed on a substrate. A cap layer is formed on the first IMD layer. A connection structure is formed on the substrate and penetrates the cap layer and the first IMD layer. A magnetic tunnel junction (MTJ) stack is formed on the connection structure and the cap layer. A patterning process is performed to the MTJ stack for forming a MTJ structure on the connection structure and removing the cap layer. A second IMD layer is formed on the first IMD layer and surrounds the MTJ structure. The semiconductor device includes the substrate, the connection structure, the first IMD layer, the MTJ structure, and the second IMD layer. The dielectric constant of the first IMD layer is lower than the dielectric constant of the second IMD layer.Type: ApplicationFiled: December 4, 2018Publication date: May 7, 2020Inventors: Chen-Yi Weng, Jing-Yin Jhang, Hui-Lin Wang, Chin-Yang Hsieh
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Publication number: 20200136014Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the t op electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).Type: ApplicationFiled: November 26, 2018Publication date: April 30, 2020Inventors: Hui-Lin Wang, Chia-Chang Hsu, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang
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Method of isolating anti-viral ingredients from , compositions comprising them and their medical use
Patent number: 10537601Abstract: The present invention provides a method of isolating at least one ingredient with anti-viral efficacy from Baphicacanthus cusia. The ingredient can be an alkaloid, a triterpenoid, a lignan, a phenylethanoid, a sesquiterpene lactone, or a flavonoid. Two new alkaloids are produced, which have not been previously reported. Moreover, the method isolates 12 compounds which could not or have not been previously isolated. A pharmaceutical composition includes the at least one ingredient and at least one pharmaceutical tolerable excipient. A method of treating a subject suffering from a viral disease includes administering at least one ingredient isolated from Baphicacanthus cusia.Type: GrantFiled: April 4, 2016Date of Patent: January 21, 2020Assignee: MACAU UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Jing-Rong Wang, Zhi-Hong Jiang, Qi-Tong Feng, Guo-Yuan Zhu, Wei-Na Gao, Zifeng Yang, Nanshan Zhong