Patents by Inventor Jingang Wu
Jingang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160020215Abstract: Various embodiments provide semiconductor structures and fabrication methods. In an exemplary method, a semiconductor substrate can contain a shallow trench isolation (STI) structure that includes a fuse region. A protective layer can be provided on the high-K dielectric layer, which is provided on the semiconductor substrate. A portion of each of the protective layer and the high-K dielectric layer can be removed from the fuse region to expose the STI structure. A fuse layer can be formed on the exposed surface of the STI structure. A portion of the fuse layer, the remaining portion of the protective layer, and a remaining portion of the high-K dielectric layer outside of the fuse region can be removed from the semiconductor substrate to form a fuse structure.Type: ApplicationFiled: September 30, 2015Publication date: January 21, 2016Inventors: JINGANG WU, JIANPING WANG, JINGHUA NI
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Patent number: 9177913Abstract: Various embodiments provide semiconductor structures and fabrication methods. In an exemplary method, a semiconductor substrate can contain a shallow trench isolation (STI) structure that includes a fuse region. A protective layer can be provided on the high-K dielectric layer, which is provided on the semiconductor substrate. A portion of each of the protective layer and the high-K dielectric layer can be removed from the fuse region to expose the STI structure. A fuse layer can be formed on the exposed surface of the STI structure. A portion of the fuse layer, the remaining portion of the protective layer, and a remaining portion of the high-K dielectric layer outside of the fuse region can be removed from the semiconductor substrate to form a fuse structure.Type: GrantFiled: September 10, 2013Date of Patent: November 3, 2015Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Jingang Wu, Jianping Wang, Jinghua Ni
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Publication number: 20140117491Abstract: Various embodiments provide semiconductor structures and fabrication methods. In an exemplary method, a semiconductor substrate can contain a shallow trench isolation (STI) structure that includes a fuse region. A protective layer can be provided on the high-K dielectric layer, which is provided on the semiconductor substrate. A portion of each of the protective layer and the high-K dielectric layer can be removed from the fuse region to expose the STI structure. A fuse layer can be formed on the exposed surface of the STI structure. A portion of the fuse layer, the remaining portion of the protective layer, and a remaining portion of the high-K dielectric layer outside of the fuse region can be removed from the semiconductor substrate to form a fuse structure.Type: ApplicationFiled: September 10, 2013Publication date: May 1, 2014Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: JINGANG WU, JIANPING WANG, JINGHUA NI
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Patent number: 8513075Abstract: A manufacturing method for manufacturing a semiconductor device includes depositing a spacer material on a semiconductor substrate, the substrate includes an NMOS region and a PMOS region, each region has a gate formed thereon. The method further includes covering the NMOS region with a first mask, forming a spacer for the PMOS gate by etching the spacer material, forming a recess in the PMOS region by etching, and growing SiGe or SiGe with in-situ-doped B in the recess of the PMOS region to form a PMOS source/drain region. The method further includes performing an anisotropic wet etching on the recess. After growing SiGE or SiGe with in-situ-doped B, the method further includes covering the PMOS region with a second mask and forming a spacer for the NMOS gate by etching the spacer material. The spacer for the PMOS and NMOS gate has a different critical dimension.Type: GrantFiled: November 29, 2011Date of Patent: August 20, 2013Assignee: Semiconductor Manufacturing International CorporationInventors: Yonggen He, Jingang Wu, Haibiao Yao
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Patent number: 8451646Abstract: A resistive random access memory utilizing gate induced drain leakage current as the read operation current and the write operation current and a method of operation the same, wherein the resistive random access memory including a plurality of arrayed memory cells, a plurality of bit-lines and a plurality word-lines, each memory cell including: a switching resistor having a first terminal and a second terminal, the first terminal of the switching resistor being connected to one bit-line; and a MOSFET being connected to the second terminal and having a gate, a source, a drain and a substrate, the gate being connected to one word-line, the read operation current and the write operation current of the memory cell being gate induced drain leakage current of the MOSFET. The RRAM array presented in this invention has superior scalability for resistors as well as transistors, which leads to a memory array with higher density.Type: GrantFiled: August 11, 2010Date of Patent: May 28, 2013Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Min-hwa Chi, Xiaohui Huang, Lijun Song, Jingang Wu, Deyuan Xiao
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Patent number: 8426286Abstract: A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided.Type: GrantFiled: April 1, 2011Date of Patent: April 23, 2013Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Cheng Yang, Bo Tao, Jason Luo, Jingang Wu
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Publication number: 20130032887Abstract: A manufacturing method for manufacturing a semiconductor device includes depositing a spacer material on a semiconductor substrate, the substrate includes an NMOS region and a PMOS region, each region has a gate formed thereon. The method further includes covering the NMOS region with a first mask, forming a spacer for the PMOS gate by etching the spacer material, forming a recess in the PMOS region by etching, and growing SiGe or SiGe with in-situ-doped B in the recess of the PMOS region to form a PMOS source/drain region. The method further includes performing an anisotropic wet etching on the recess. After growing SiGE or SiGe with in-situ-doped B, the method further includes covering the PMOS region with a second mask and forming a spacer for the NMOS gate by etching the spacer material. The spacer for the PMOS and NMOS gate has a different critical dimension.Type: ApplicationFiled: November 29, 2011Publication date: February 7, 2013Applicant: Semiconductor Manufacturing International (Beijing) CorporationInventors: Yonggen HE, Jingang WU, HaiBiao YAO
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Publication number: 20110254127Abstract: A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided.Type: ApplicationFiled: April 1, 2011Publication date: October 20, 2011Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: CHENG YANG, Bo Tao, Jason Luo, Jingang Wu
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Publication number: 20110051496Abstract: A resistive random access memory utilizing gate induced drain leakage current as the read operation current and the write operation current and a method of operation the same, wherein the resistive random access memory including a plurality of arrayed memory cells, a plurality of bit-lines and a plurality word-lines, each memory cell including: a switching resistor having a first terminal and a second terminal, the first terminal of the switching resistor being connected to one bit-line; and a MOSFET being connected to the second terminal and having a gate, a source, a drain and a substrate, the gate being connected to one word-line, the read operation current and the write operation current of the memory cell being gate induced drain leakage current of the MOSFET. The RRAM array presented in this invention has superior scalability for resistors as well as transistors, which leads to a memory array with higher density.Type: ApplicationFiled: August 11, 2010Publication date: March 3, 2011Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Min-hwa CHI, Xiaohui HUANG, Lijun SONG, Jingang WU, Deyuan XIAO
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Patent number: 7534711Abstract: System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a substrate having a contact region, which is provided between a first word line and a second word line. The contact region has an overlying plug structure, which is provided within a thickness of a first dielectric layer. The first dielectric layer includes a portion overlying the plug structure. The first dielectric layer has a planarized surface region. The method also includes a step for forming a first line and a second line and a space provided between the first word line and the second world line. The space is provided within a region overlying the plug structure.Type: GrantFiled: December 23, 2006Date of Patent: May 19, 2009Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Fei Luo, Guanqie Gao, Cheng Yang
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Publication number: 20080146030Abstract: System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a substrate having a contact region, which is provided between a first word line and a second word line. The contact region has an overlying plug structure, which is provided within a thickness of a first dielectric layer. The first dielectric layer includes a portion overlying the plug structure. The first dielectric layer has a planarized surface region. The method also includes a step for forming a first line and a second line and a space provided between the first word line and the second world line. The space is provided within a region overlying the plug structure.Type: ApplicationFiled: December 23, 2006Publication date: June 19, 2008Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Fei Luo, Guanqie Gao, Cheng Yang
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Patent number: 7259027Abstract: A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of particles cause the crystalline material to be in an amorphous state. The method also includes introducing a plurality of dopant particles into a selected depth of the crystalline material in the amorphous state using an implantation tool. The amorphous state traps the dopant particles. The method includes subjecting the monitor wafer including the plurality of particles and dopant particles into thermal anneal process to activate the dopant. The sheet resistivity is measured. The method operates the implantation tool using one or more production wafers if the dose of the dopant particles in the monitor water is within a tolerance of a specification limit.Type: GrantFiled: February 6, 2004Date of Patent: August 21, 2007Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Jianpeng Song, Minggang Chang, Chinte Huang
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Patent number: 6962884Abstract: A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer.Type: GrantFiled: December 19, 2003Date of Patent: November 8, 2005Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Amy Liu, Tony Wang, Dennis Huang
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Publication number: 20050142671Abstract: A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of particles cause the crystalline material to be in an amorphous state. The method also includes introducing a plurality of dopant particles into a selected depth of the crystalline material in the amorphous state using an implantation tool. The amorphous state traps the dopant particles. The method includes subjecting the monitor wafer including the plurality of particles and dopant particles into thermal anneal process to activate the dopant. The sheet resistivity is measured. The method operates the implantation tool using one or more production wafers if the dose of the dopant particles in the monitor water is within a tolerance of a specification limit.Type: ApplicationFiled: February 6, 2004Publication date: June 30, 2005Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Jianpeng Song, Minggang Chang, Chinte Huang
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Publication number: 20050124080Abstract: A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer.Type: ApplicationFiled: December 19, 2003Publication date: June 9, 2005Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jingang Wu, Amy Liu, Tony Wang, Dennis Huang
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Patent number: 6048820Abstract: The invention relates to a copper-based catalyst with high activity and a long catalyst life and to a method of producing the catalyst. This catalyst essentially comprises copper oxide, zinc oxide, aluminum oxide, and silicon oxide and optionally containing zirconium oxide, gallium oxide, and palladium oxide, wherein with the total weight of the catalyst being taken as 100%, the above oxides account for, in the order mentioned, 20-60 weight %, 10-50 weight %, 2-10 weight %, 0.3-0.9 weight %, 0-40 weight %, 0-10 weight %, and 0-10 weight %, respectively, and the silicon oxide mentioned above has been derived from colloidal silica or dissolved silica in water, which catalyst has been subjected to calcination at 480-690.degree. C.Type: GrantFiled: March 9, 1998Date of Patent: April 11, 2000Assignees: Agency of Industrial of Sciences and Technology, The Reseach Institute of Innovative Technology for the EarthInventors: Masami Takeuchi, Hirotaka Mabuse, Taiki Watanabe, Michiaki Umeno, Takashi Matsuda, Kozo Mori, Kenji Ushikoshi, Jamil Toyir, Shengcheng Luo, Jingang Wu, Masahiro Saito