Abstract: In one aspect, the disclosure relates to filtration layers comprising nanostructures, methods of making the same, and devices incorporating the same. In one aspect, the filtration layers allow for air flow while blocking passage of sub-micron-sized particles including viruses and environmental pollutants. In another aspect, the filtration layers are biocompatible, flexible, stable over a wide temperature range, and compatible with standard disinfection techniques. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.

Abstract: A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.

Abstract: A photovoltaic cell includes nanostructures formed of nanowires on a substrate, where the nanostructures include an array of three dimensional nanotrees or nanobushes with a core-shell structure having a core and one or more shells sequentially formed on the core. The core o f the core-shell structure is formed of a highly conductive metal or semiconductor, and the shell o f the core-shell structure is formed of a metal, semiconductor, or polymer, such that the core-shell structure has substantially large surface and interface area for photon energy harvesting and conversion into electricity.

Abstract: A field effect transistor memory cell has a source region, a drain region, a channel region and a gate region, with the channel region extending from the source region to the drain region and being formed from at least one nanowire which has at least one defect such that charges can be trapped in the defects and released from the defects by a voltage applied to the gate region. A memory device built up from such memory cells and a method of manufacturing such memory cells is also disclosed.

Abstract: A field effect transistor memory cell has a source region, a drain region, a channel region and a gate region, with the channel region extending from the source region to the drain region and being formed from at least one nanowire which has at least one defect such that charges can be trapped in the defects and released from the defects by a voltage applied to the gate region. A memory device built up from such memory cells and a method of manufacturing such memory cells is also disclosed.