Patents by Inventor Jingcheng ZHOU

Jingcheng ZHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide diode having high surge current capability and manufacturing method thereof
    Patent number: 11374094
    Abstract: A silicon carbide diode having a high surge current capability, and including a semiconductor base plate. The semiconductor base plate includes an N-type silicon carbide substrate and an N-type silicon carbide epitaxial layer located on the N-type silicon carbide substrate. The upper portion of the N-type silicon carbide epitaxial layer is provided with a plurality of P-type well regions. The N-type high resistance region is provided under the P-type well region or on the lower surface of the P-type well region. The resistivity of the N-type high resistance region is greater than the resistivity of the N-type silicon carbide epitaxial layer. The N-type high resistance region is provided under the P-type well region, and a plurality of grooves are provided in the P-type well region or a plurality of block-shaped P-type regions uniformly arranged at intervals are provided in the N-type high resistance region.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: June 28, 2022
    Assignee: WUXI NCE POWER CO., LTD
    Inventors: Yuanzheng Zhu, Zhuo Yang, Jingcheng Zhou, Peng Ye
  • SICILON CARBIDE DIODE HAVING HIGH SURGE CURRENT CAPABILITY AND MANUFACTURING METHOD THEREOF
    Publication number: 20210336010
    Abstract: A silicon carbide diode having a high surge current capability, and including a semiconductor base plate. The semiconductor base plate includes an N-type silicon carbide substrate and an N-type silicon carbide epitaxial layer located on the N-type silicon carbide substrate. The upper portion of the N-type silicon carbide epitaxial layer is provided with a plurality of P-type well regions. The N-type high resistance region is provided under the P-type well region or on the lower surface of the P-type well region. The resistivity of the N-type high resistance region is greater than the resistivity of the N-type silicon carbide epitaxial layer. The N-type high resistance region is provided under the P-type well region, and a plurality of grooves are provided in the P-type well region or a plurality of block-shaped P-type regions uniformly arranged at intervals are provided in the N-type high resistance region.
    Type: Application
    Filed: September 12, 2018
    Publication date: October 28, 2021
    Applicant: WUXI NCE POWER CO., LTD
    Inventors: Yuanzheng ZHU, Zhuo YANG, Jingcheng ZHOU, Peng YE