Abstract: A method for improving the stability of perovskite solar cells includes: adding iodoformamidine and cesium iodide to a solvent and stirring, adding bromomethylamine and stirring, adding lead iodide and 3,4-dichloroaniline and stirring, obtaining a perovskite precursor solution for improving the stability of perovskite solar cells, spin-coating the perovskite precursor solution for improving the stability of perovskite solar cells onto a substrate, and performing thermal annealing to obtain a light absorption layer of a solar cell. A solar cell prepared with said perovskite layer solves the defects of existing perovskite technology, providing a means for improving the stability of perovskite for use in the preparation of batteries that has low processing environment requirements and a convenient preparation method, and can maintain stable properties in an ordinary environment for a long time.

Abstract: Disclosed is a perovskite precursor solution for improving stability of a perovskite solar cell. Iodoformamidine and cesium iodide are added into a solvent, and bromomethylamine, lead iodide and 3,4-dichloroaniline are added after stirring to obtain the perovskite precursor solution. The perovskite precursor solution is spin-coated on a substrate, obtaining a perovskite thin film by thermal annealing as a light absorption layer of the solar cell. The perovskite precursor solution prepared by the present invention replaces an existing perovskite layer, the defects in the existing perovskite mineralization technology are solved. The perovskite stability improvement leads lower requirements for the process environment and convenient preparation method, realizes the long-time stable performance in a common environment.

Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.